Molecular-beam-epitaxial-grown n-GaAs_1-xSb_x/N-GaAs heterostructures characterized by admittance spectroscopy

The admittance spectroscopy technique has been applied to characterize deep traps in molecular-beam-epitaxial-grown n-GaAs_1-xSb _x/N-GaAs heterostructures. A single dominant defect has been identified in each of the three samples containing different Sb content. It was found that the substrate misorientation appears to affect the formation of the dominant defect, resulting in different defects in samples grown under the same conditions. It shows a good agreement when comparing the admittance spectroscopy results with those of the previously reported work of deep-level transient spectroscopy.