Molecular-beam-epitaxial-grown n-GaAs1-xSbx/N-GaAs heterostructures characterized by admittance spectroscopy

J. H. Zhao, Z. Lu

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The admittance spectroscopy technique has been applied to characterize deep traps in molecular-beam-epitaxial-grown n-GaAs1-xSb x/N-GaAs heterostructures. A single dominant defect has been identified in each of the three samples containing different Sb content. It was found that the substrate misorientation appears to affect the formation of the dominant defect, resulting in different defects in samples grown under the same conditions. It shows a good agreement when comparing the admittance spectroscopy results with those of the previously reported work of deep-level transient spectroscopy.

Original languageEnglish (US)
Pages (from-to)7491-7495
Number of pages5
JournalJournal of Applied Physics
Issue number11
StatePublished - 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


Dive into the research topics of 'Molecular-beam-epitaxial-grown n-GaAs1-xSbx/N-GaAs heterostructures characterized by admittance spectroscopy'. Together they form a unique fingerprint.

Cite this