Monolithic integration of a 4H-silicon carbide vertical JFET and a JBS diode

Rahul Radhakrishnan, Jian H. Zhao

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In many applications, it is desirable to integrate a power switch with an antiparallel diode on the same chip. In this letter, the monolithic integration of a silicon carbide vertical junction field-effect transistor (VJFET) with a junction barrier Schottky (JBS) diode is achieved, and the device is characterized at high voltage. The fabrication process involves no additional steps to that of the VJFET. The VJFET integrated with the JBS diode is measured up to 834 V when turned off and has a specific on-state resistance of 7.8 Ω ċ cm2 at 100 A/cm2 when turned on. In addition to validating the high-voltage integration of the freewheeling diode with the power switch, reverse conduction shown here through the integrated diode and the JFET channel can be used in synchronous rectification to significantly reduce the device conduction loss.

Original languageEnglish (US)
Article number5756451
Pages (from-to)785-787
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number6
DOIs
StatePublished - Jun 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Power electronics
  • power field-effect transistor (FET) switches
  • power integrated circuits
  • power semiconductor devices
  • silicon carbide (SiC)

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