TY - JOUR
T1 - Monolithic integration of a 4H-silicon carbide vertical JFET and a JBS diode
AU - Radhakrishnan, Rahul
AU - Zhao, Jian H.
N1 - Funding Information:
Manuscript received February 22, 2011; revised March 9, 2011; accepted March 9, 2011. Date of publication April 28, 2011; date of current version May 25, 2011. This work was supported in part by the Office of Naval Research under Contract N00014-08-C-0398 and in part by Dow Corning Corporation. The review of this letter was arranged by Editor S.-H. Ryu.
PY - 2011/6
Y1 - 2011/6
N2 - In many applications, it is desirable to integrate a power switch with an antiparallel diode on the same chip. In this letter, the monolithic integration of a silicon carbide vertical junction field-effect transistor (VJFET) with a junction barrier Schottky (JBS) diode is achieved, and the device is characterized at high voltage. The fabrication process involves no additional steps to that of the VJFET. The VJFET integrated with the JBS diode is measured up to 834 V when turned off and has a specific on-state resistance of 7.8 Ω ċ cm2 at 100 A/cm2 when turned on. In addition to validating the high-voltage integration of the freewheeling diode with the power switch, reverse conduction shown here through the integrated diode and the JFET channel can be used in synchronous rectification to significantly reduce the device conduction loss.
AB - In many applications, it is desirable to integrate a power switch with an antiparallel diode on the same chip. In this letter, the monolithic integration of a silicon carbide vertical junction field-effect transistor (VJFET) with a junction barrier Schottky (JBS) diode is achieved, and the device is characterized at high voltage. The fabrication process involves no additional steps to that of the VJFET. The VJFET integrated with the JBS diode is measured up to 834 V when turned off and has a specific on-state resistance of 7.8 Ω ċ cm2 at 100 A/cm2 when turned on. In addition to validating the high-voltage integration of the freewheeling diode with the power switch, reverse conduction shown here through the integrated diode and the JFET channel can be used in synchronous rectification to significantly reduce the device conduction loss.
KW - Power electronics
KW - power field-effect transistor (FET) switches
KW - power integrated circuits
KW - power semiconductor devices
KW - silicon carbide (SiC)
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U2 - 10.1109/LED.2011.2132111
DO - 10.1109/LED.2011.2132111
M3 - Article
AN - SCOPUS:79957617336
VL - 32
SP - 785
EP - 787
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 6
M1 - 5756451
ER -