Monte Carlo simulation of 4H-SiC IMPATT diodes

J. H. Zhao, V. Gruzinskis, Y. Lou, M. Weiner, M. Pan, P. Shiktorov, E. Starikov

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


A Monte Carlo particle (MCP) bipolar model for 4H-SiC consisting of three electron and two hole bands is developed to simulate the millimetre wave power generation by 4H-SiC IMPATT diodes. Validation of the model is provided by comparing (i) carrier transport properties with full band simulation results and (ii) hole impact ionization coefficients with the most recent experimental results. MCP simulation results are reported for a low-voltage 4H-SiC IMPATT diode connected directly in a parallel resonant circuit with a standard 50 Ω load resistor. The detailed evolution of carrier generation, accumulation and drift are presented to confirm the design of an efficient hi-lo IMPATT diode structure. Critical performance parameters investigated include bias and frequency dependences of millimetre wave output power, generation efficiency, conduction current and frequency stability at an operating frequency around 200 GHz. It is predicted that very high-power millimetre waves at around 200 GHz can be generated at pulse mode.

Original languageEnglish (US)
Pages (from-to)1093-1100
Number of pages8
JournalSemiconductor Science and Technology
Issue number11
StatePublished - Nov 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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