Monte Carlo simulation of small- and large-signal response operation of a GaN THz maser

E. Starikov, P. Shiktorov, V. Gružinskis, L. Reggiani, L. Varani, J. C. Vaissière, J. H. Zhao

Research output: Contribution to journalArticlepeer-review

Abstract

Amplification and generation of microwave radiation by optical phonon transit-time resonance GaN THz maser is investigated theoretically by Monte Carlo simulations. Results confirm that GaN is a promising material for THz power generation. The amplification and generation occurs in the wide frequency range of 0.3 to 3 THz and persists in the THz frequency range up to liquid nitrogen temperatures and doping levels of about 5 × 1016 cm-3.

Original languageEnglish (US)
Pages (from-to)196-201
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4415
DOIs
StatePublished - 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • GaN
  • Masers
  • Monte Carlo simulation
  • THz generation

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