Multi-resistance states through electrically driven phase transitions in VO 2/HfO 2/VO 2 heterostructures on silicon

You Zhou; Zheng Yang; Shriram Ramanathan

doi:10.1109/LED.2011.2173790

Multi-resistance states through electrically driven phase transitions in VO ₂/HfO ₂/VO ₂ heterostructures on silicon

You Zhou, Zheng Yang, Shriram Ramanathan

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report on electrically induced multi-resistance states in VO ₂/HfO ₂/VO ₂ heterostructures on silicon at room temperature. Through geometric confinement, the critical threshold voltage for the transition in each VO ₂ layer can be tuned, and this leads to sharp current jumps as each layer undergoes a conductance transition. Consistent results are obtained in both voltage and current sweep conditions. The ability to realize variable resistance states in correlated oxide heterostructures fabricated on silicon could be of relevance to emerging information processing and storage schemes utilizing functional oxides.

Original language	English (US)
Article number	6095587
Pages (from-to)	101-103
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1109/LED.2011.2173790
State	Published - Jan 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Metal-insulator transition
phase-change materials
resistive memory
threshold switching
vanadium dioxide

Access to Document

10.1109/LED.2011.2173790

Cite this

@article{d08de87e17564d0ab82d9b41fb98fd1a,

title = "Multi-resistance states through electrically driven phase transitions in VO 2/HfO 2/VO 2 heterostructures on silicon",

abstract = "We report on electrically induced multi-resistance states in VO 2/HfO 2/VO 2 heterostructures on silicon at room temperature. Through geometric confinement, the critical threshold voltage for the transition in each VO 2 layer can be tuned, and this leads to sharp current jumps as each layer undergoes a conductance transition. Consistent results are obtained in both voltage and current sweep conditions. The ability to realize variable resistance states in correlated oxide heterostructures fabricated on silicon could be of relevance to emerging information processing and storage schemes utilizing functional oxides.",

keywords = "Metal-insulator transition, phase-change materials, resistive memory, threshold switching, vanadium dioxide",

author = "You Zhou and Zheng Yang and Shriram Ramanathan",

note = "Funding Information: Manuscript received July 30, 2011; revised October 13, 2011; accepted October 22, 2011. Date of publication December 6, 2011; date of current version December 23, 2011. This work was supported by Office of Naval Research under Grant N00014-10-1-0131. The review of this letter was arranged by Editor W. T. Ng.",

year = "2012",

month = jan,

doi = "10.1109/LED.2011.2173790",

language = "English (US)",

volume = "33",

pages = "101--103",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Multi-resistance states through electrically driven phase transitions in VO 2/HfO 2/VO 2 heterostructures on silicon

AU - Zhou, You

AU - Yang, Zheng

AU - Ramanathan, Shriram

N1 - Funding Information: Manuscript received July 30, 2011; revised October 13, 2011; accepted October 22, 2011. Date of publication December 6, 2011; date of current version December 23, 2011. This work was supported by Office of Naval Research under Grant N00014-10-1-0131. The review of this letter was arranged by Editor W. T. Ng.

PY - 2012/1

Y1 - 2012/1

N2 - We report on electrically induced multi-resistance states in VO 2/HfO 2/VO 2 heterostructures on silicon at room temperature. Through geometric confinement, the critical threshold voltage for the transition in each VO 2 layer can be tuned, and this leads to sharp current jumps as each layer undergoes a conductance transition. Consistent results are obtained in both voltage and current sweep conditions. The ability to realize variable resistance states in correlated oxide heterostructures fabricated on silicon could be of relevance to emerging information processing and storage schemes utilizing functional oxides.

AB - We report on electrically induced multi-resistance states in VO 2/HfO 2/VO 2 heterostructures on silicon at room temperature. Through geometric confinement, the critical threshold voltage for the transition in each VO 2 layer can be tuned, and this leads to sharp current jumps as each layer undergoes a conductance transition. Consistent results are obtained in both voltage and current sweep conditions. The ability to realize variable resistance states in correlated oxide heterostructures fabricated on silicon could be of relevance to emerging information processing and storage schemes utilizing functional oxides.

KW - Metal-insulator transition

KW - phase-change materials

KW - resistive memory

KW - threshold switching

KW - vanadium dioxide

UR - http://www.scopus.com/inward/record.url?scp=84655169719&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84655169719&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2173790

DO - 10.1109/LED.2011.2173790

M3 - Article

AN - SCOPUS:84655169719

SN - 0741-3106

VL - 33

SP - 101

EP - 103

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 6095587

ER -