Computational tools are used to cross spatial and temporal scales during investigations of ballistic events on armor materials. The ensuing weakening of these materials after such an event is of particular interest, and recent investigations of boron carbide (B4C) inclusions in silicon carbide (SiC) showed that weaknesses in these materials did not originate at the grain boundaries. In an effort to characterize the development of structural changes, a multi-scale computational approach is employed. Several samples of varying B4C concentrations in SiC matrices are studied with density functional theory molecular dynamics (DFT-MD) simulations to determine the stability at the SiC/B4C interface under several high temperature and pressure regimes. DFT calculations employing molecular clusters to represent single sites along the interface are also presented, and this smaller-scale approach aims to isolate the structural changes that occur at each site and their contribution to the stabilities of these SiC/B4C samples. These two spatial and temporal scales provide insight into how interface dynamics play a role in the development of structural weaknesses. A comparison with experimental observations is also included.