Multifunctional ZnO-based thin-film bulk acoustic resonator for biosensors

Ying Chen, Pavel I. Reyes, Ziqing Duan, Gaurav Saraf, Richard Wittstruck, Yicheng Lu, Olena Taratula, Elena Galoppini

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg x Zn 1-x O) are piezoelectric materials that can be used for high-quality-factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Thin-film bulk acoustic resonators (TFBARs) are attractive for applications in advanced communication and in various sensors as they offer the capability of monolithic integration of BAW resonators with radio-frequency integrated circuits (RF ICs). In this paper we report Mg x Zn 1-x O-based TFBAR biosensors. The devices are built on Si substrates with an acoustic mirror consisting of alternating quarter-wavelength silicon dioxide (SiO 2) and tungsten (W) layers to isolate the TFBAR from the Si substrate. High-quality ZnO and Mg x Zn 1-x O thin films are achieved through a radio-frequency (RF) sputtering technique. Tuning of the device operating frequency is realized by varying the Mg composition in the piezoelectric Mg x Zn 1-x O layer. Simulation results based on a transmission-line model of the TFBAR show close agreement with the experimental results. ZnO nanostructures are grown on the TFBAR's top surface using metal- organic chemical vapor deposition (MOCVD) to form the nano-TFBAR sensor, which offers giant sensing area, faster response, and higher sensitivity over the planar sensor configuration. Mass sensitivity higher than 10 3 Hz cm 2/ng is achieved. In order to study the feasibility of the nano-TFBAR for biosensing, the nanostructured ZnO surfaces were functionalized to selectively immobilize DNA, as verified by hybridization with its fluorescence-tagged DNA complement.

Original languageEnglish (US)
Pages (from-to)1605-1611
Number of pages7
JournalJournal of Electronic Materials
Volume38
Issue number8
DOIs
StatePublished - Aug 1 2009

Fingerprint

Acoustic resonators
Zinc Oxide
Zinc oxide
bioinstrumentation
Biosensors
zinc oxides
resonators
Thin films
acoustics
thin films
Resonators
Sensors
DNA
Acoustic waves
Organic Chemicals
sensors
radio frequencies
Tungsten
deoxyribonucleic acid
Ternary alloys

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Biosensors
  • DNA immobilization
  • MgZnO
  • Nanostructures
  • Piezoelectricity
  • Thin-film resonators

Cite this

Chen, Ying ; Reyes, Pavel I. ; Duan, Ziqing ; Saraf, Gaurav ; Wittstruck, Richard ; Lu, Yicheng ; Taratula, Olena ; Galoppini, Elena. / Multifunctional ZnO-based thin-film bulk acoustic resonator for biosensors. In: Journal of Electronic Materials. 2009 ; Vol. 38, No. 8. pp. 1605-1611.
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Multifunctional ZnO-based thin-film bulk acoustic resonator for biosensors. / Chen, Ying; Reyes, Pavel I.; Duan, Ziqing; Saraf, Gaurav; Wittstruck, Richard; Lu, Yicheng; Taratula, Olena; Galoppini, Elena.

In: Journal of Electronic Materials, Vol. 38, No. 8, 01.08.2009, p. 1605-1611.

Research output: Contribution to journalArticle

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AU - Chen, Ying

AU - Reyes, Pavel I.

AU - Duan, Ziqing

AU - Saraf, Gaurav

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AB - Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg x Zn 1-x O) are piezoelectric materials that can be used for high-quality-factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Thin-film bulk acoustic resonators (TFBARs) are attractive for applications in advanced communication and in various sensors as they offer the capability of monolithic integration of BAW resonators with radio-frequency integrated circuits (RF ICs). In this paper we report Mg x Zn 1-x O-based TFBAR biosensors. The devices are built on Si substrates with an acoustic mirror consisting of alternating quarter-wavelength silicon dioxide (SiO 2) and tungsten (W) layers to isolate the TFBAR from the Si substrate. High-quality ZnO and Mg x Zn 1-x O thin films are achieved through a radio-frequency (RF) sputtering technique. Tuning of the device operating frequency is realized by varying the Mg composition in the piezoelectric Mg x Zn 1-x O layer. Simulation results based on a transmission-line model of the TFBAR show close agreement with the experimental results. ZnO nanostructures are grown on the TFBAR's top surface using metal- organic chemical vapor deposition (MOCVD) to form the nano-TFBAR sensor, which offers giant sensing area, faster response, and higher sensitivity over the planar sensor configuration. Mass sensitivity higher than 10 3 Hz cm 2/ng is achieved. In order to study the feasibility of the nano-TFBAR for biosensing, the nanostructured ZnO surfaces were functionalized to selectively immobilize DNA, as verified by hybridization with its fluorescence-tagged DNA complement.

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