Multilevel Resist for Lithography Below 100 nm

Richard E. Howard; Evelyn L. Hu; Lawrence D. Jackel

doi:10.1109/T-ED.1981.20617

Multilevel Resist for Lithography Below 100 nm

Richard E. Howard
, Evelyn L. Hu
, Lawrence D. Jackel

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Features as small as 25 nm have been made with electron-beam lithography using multilevel resists on thick silicon substrates. Liftoff patterning of metal lines and reactive ion etching of silicon have demonstrated the possibility of making device structures with lateral dimensions below 100 nm.

Original language	English (US)
Pages (from-to)	1378-1381
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	28
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1981.20617
State	Published - Nov 1981
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1981.20617

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title = "Multilevel Resist for Lithography Below 100 nm",

abstract = "Features as small as 25 nm have been made with electron-beam lithography using multilevel resists on thick silicon substrates. Liftoff patterning of metal lines and reactive ion etching of silicon have demonstrated the possibility of making device structures with lateral dimensions below 100 nm.",

author = "Howard, \{Richard E.\} and Hu, \{Evelyn L.\} and Jackel, \{Lawrence D.\}",

year = "1981",

month = nov,

doi = "10.1109/T-ED.1981.20617",

language = "English (US)",

volume = "28",

pages = "1378--1381",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

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T1 - Multilevel Resist for Lithography Below 100 nm

AU - Howard, Richard E.

AU - Hu, Evelyn L.

AU - Jackel, Lawrence D.

PY - 1981/11

Y1 - 1981/11

N2 - Features as small as 25 nm have been made with electron-beam lithography using multilevel resists on thick silicon substrates. Liftoff patterning of metal lines and reactive ion etching of silicon have demonstrated the possibility of making device structures with lateral dimensions below 100 nm.

AB - Features as small as 25 nm have been made with electron-beam lithography using multilevel resists on thick silicon substrates. Liftoff patterning of metal lines and reactive ion etching of silicon have demonstrated the possibility of making device structures with lateral dimensions below 100 nm.

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UR - https://www.scopus.com/pages/publications/0019633430#tab=citedBy

U2 - 10.1109/T-ED.1981.20617

DO - 10.1109/T-ED.1981.20617

M3 - Article

AN - SCOPUS:0019633430

SN - 0018-9383

VL - 28

SP - 1378

EP - 1381

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

Multilevel Resist for Lithography Below 100 nm

Abstract

All Science Journal Classification (ASJC) codes

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