Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

B. K. Ng, F. Yan, J. P.R. David, R. C. Tozer, G. J. Rees, C. Qin, J. H. Zhao

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

The avalanche multiplication and excess noise characteristics of thin 4H-SiC avalanche photodiodes with an i-region width of 0.1 μm have been investigated. The diodes are found to exhibit multiplication characteristics which change significantly when the wavelength of the illuminating light changes from 230 to 365 nm. These multiplication characteristics show unambiguously that β > α in 4H-SiC and that the β/α ratio remains large even in thin 4H-SiC diodes. Low excess noise, corresponding to k = 0.1 in the local model where k = α/β for hole injection, was measured using 325-nm light. The results indicate that 4H-SiC is a suitable material for realizing low-noise UV avalanche photodiodes requiring good visible-blind performance.

Original languageEnglish (US)
Pages (from-to)1342-1344
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number9
DOIs
StatePublished - Sep 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Keywords

  • 4H-SiC
  • Avalanche multiplication
  • Excess noise
  • Impact ionization
  • Photodiodes
  • UV APD
  • Visible-blind

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