Nanomechanical response of the si lattice to hydrogen implantation and annealing for layer splitting

Diefeng Gu, Helmut Baumgart, Konstantin K. Bourdelle, George K. Celler, A. A. Elmustafa

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We studied the effect of hydrogen implantation into Si and the nanomechanical response to defect interaction, which is responsible for wafer splitting during the Smart Cut™ layer transfer of (001) oriented Si wafers. Hardness and modulus of H implanted Si samples were measured by nanoindentation technique before and after thermal annealing. A significant weakening of the hardness and elastic modulus of the single crystalline Si lattice in the H implantation-induced damage zone following annealing was observed. Cross-sectional transmission electron microscopy revealed that the majority of extended defects consist of platelets, which developed parallel to the (001) Si surface during annealing.

Original languageEnglish (US)
Pages (from-to)1012021-1012024
Number of pages4
JournalJapanese Journal of Applied Physics
Volume48
Issue number10 Part 1
DOIs
StatePublished - 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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