We studied the effect of hydrogen implantation into Si and the nanomechanical response to defect interaction, which is responsible for wafer splitting during the Smart Cut™ layer transfer of (001) oriented Si wafers. Hardness and modulus of H implanted Si samples were measured by nanoindentation technique before and after thermal annealing. A significant weakening of the hardness and elastic modulus of the single crystalline Si lattice in the H implantation-induced damage zone following annealing was observed. Cross-sectional transmission electron microscopy revealed that the majority of extended defects consist of platelets, which developed parallel to the (001) Si surface during annealing.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)