NANOMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS: A FLEXIBLE TOOL FOR STUDYING INVERSION LAYER PHYSICS.

P. M. Mankiewich; R. E. Howard; L. D. Jackel; W. J. Skocpol; D. M. Tennant

doi:10.1116/1.583337

NANOMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS: A FLEXIBLE TOOL FOR STUDYING INVERSION LAYER PHYSICS.

P. M. Mankiewich, R. E. Howard, L. D. Jackel, W. J. Skocpol, D. M. Tennant

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The fabrication of multiterminal silicon MOSFET's containing channel segments as narrow as 30 nm is described. These can be used for a variety of fundamental studies of quantum transport. In particular, in 100-nm channels, spatially localized voltage measurements can be made probing the scattering effects of a single electron trap.

Original language	English (US)
Pages (from-to)	380-382
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	4
Issue number	1
DOIs	https://doi.org/10.1116/1.583337
State	Published - Jan 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The fabrication of multiterminal silicon MOSFET's containing channel segments as narrow as 30 nm is described. These can be used for a variety of fundamental studies of quantum transport. In particular, in 100-nm channels, spatially localized voltage measurements can be made probing the scattering effects of a single electron trap.",

author = "Mankiewich, {P. M.} and Howard, {R. E.} and Jackel, {L. D.} and Skocpol, {W. J.} and Tennant, {D. M.}",

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AU - Howard, R. E.

AU - Jackel, L. D.

AU - Skocpol, W. J.

AU - Tennant, D. M.

PY - 1986/1

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AB - The fabrication of multiterminal silicon MOSFET's containing channel segments as narrow as 30 nm is described. These can be used for a variety of fundamental studies of quantum transport. In particular, in 100-nm channels, spatially localized voltage measurements can be made probing the scattering effects of a single electron trap.

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NANOMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS: A FLEXIBLE TOOL FOR STUDYING INVERSION LAYER PHYSICS.

Abstract

All Science Journal Classification (ASJC) codes

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