@inproceedings{21716a0fdf254da3ba6718315169839c,
title = "Nanoporous, low-dielectric constant organosilicate materials derived from inorganic polymer blends",
abstract = "Porous materials will be needed to reach the ultralow-k dielectric on-chip insulator objectives for advanced semiconductor chips. Nanoporous organosilicates can be prepared using thermally labile macromolecular porogens and silsesquioxane resins. This process readily achieves dielectric constants of 1.5. There is a significant difference in porous morphologies depending on whether the porogens function by nucleation and growth or an actual templating mechanism.",
author = "Miller, {R. D.} and W. Volksen and Lee, {V. Y.} and E. Connor and T. Magbitang and R. Zafran and L. Sundberg and Hawker, {C. J.} and Hedrick, {J. L.} and E. Huang and M. Toney and Huang, {Q. R.} and Frank, {C. W.} and Kim, {H. C.}",
year = "2004",
doi = "10.1021/bk-2004-0874.ch011",
language = "English (US)",
isbn = "9780841238572",
series = "ACS Symposium Series",
publisher = "American Chemical Society",
pages = "144--160",
booktitle = "Polymers for Microelectronics and Nanoelectronics",
address = "United States",
}