Abstract
We show that the gauge theory of the two-dimensional doped Mott insulator predicts an anomalous anisotropic negative contribution to the magnetoresistance, which dominates at low temperatures. This anomalous contribution to the magnetoresistivity falls rapidly with increasing temperature, so the total magnetoresistivity is positive at room temperatures. This effect is due to orbital motion and is highly anistropic with respect to the orientation of the magnetic field. We discuss possible applications of these results to the high-Tc materials.
Original language | English (US) |
---|---|
Pages (from-to) | 519-522 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 45 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 1992 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
Cite this
}
Negative magnetoresistance of the normal state of the doped Mott insulator. / Ioffe, Lev; Wiegmann, P.
In: Physical Review B, Vol. 45, No. 1, 01.01.1992, p. 519-522.Research output: Contribution to journal › Article
TY - JOUR
T1 - Negative magnetoresistance of the normal state of the doped Mott insulator
AU - Ioffe, Lev
AU - Wiegmann, P.
PY - 1992/1/1
Y1 - 1992/1/1
N2 - We show that the gauge theory of the two-dimensional doped Mott insulator predicts an anomalous anisotropic negative contribution to the magnetoresistance, which dominates at low temperatures. This anomalous contribution to the magnetoresistivity falls rapidly with increasing temperature, so the total magnetoresistivity is positive at room temperatures. This effect is due to orbital motion and is highly anistropic with respect to the orientation of the magnetic field. We discuss possible applications of these results to the high-Tc materials.
AB - We show that the gauge theory of the two-dimensional doped Mott insulator predicts an anomalous anisotropic negative contribution to the magnetoresistance, which dominates at low temperatures. This anomalous contribution to the magnetoresistivity falls rapidly with increasing temperature, so the total magnetoresistivity is positive at room temperatures. This effect is due to orbital motion and is highly anistropic with respect to the orientation of the magnetic field. We discuss possible applications of these results to the high-Tc materials.
UR - http://www.scopus.com/inward/record.url?scp=0010046575&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0010046575&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.45.519
DO - 10.1103/PhysRevB.45.519
M3 - Article
AN - SCOPUS:0010046575
VL - 45
SP - 519
EP - 522
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 1
ER -