NEW METHODS OF FINE FEATURE FABRICATION USING E-BEAM LITHOGRAPHY.

E. L. Hu; L. D. Jackel; R. E. Howard; L. A. Fetter; P. Grabbe; D. M. Tennant

NEW METHODS OF FINE FEATURE FABRICATION USING E-BEAM LITHOGRAPHY.

E. L. Hu, L. D. Jackel, R. E. Howard, L. A. Fetter, P. Grabbe, D. M. Tennant

Research output: Contribution to conference › Paper › peer-review

Abstract

An e-beam writing technique has been developed, which makes use of a two-layer electron-sensitive resist. This technique enables producing, via lift-off processing, 40 nm wide Au lines, separated 80 nm center-to-center on thick silicon substrates. The process is compatible with oblique evaporation techniques so that high accuracy alignment can be obtained in multiple-layer device structures. Superconducting tunnel junctions with areas as small as 10** minus **1**0cm**2 have been fabricated with this process. Utilizing this lithography technique in conjunction with reactive ion etching, pedestals 100 nm wide by 300 nm deep were etched into silicon substrates.

Original language	English (US)
Pages	200-205
Number of pages	6
State	Published - 1980
Externally published	Yes
Event	Proc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf - St Louis, MO, USA Duration: May 11 1980 → May 16 1980

Other

Other	Proc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf
City	St Louis, MO, USA
Period	5/11/80 → 5/16/80

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "NEW METHODS OF FINE FEATURE FABRICATION USING E-BEAM LITHOGRAPHY.",

abstract = "An e-beam writing technique has been developed, which makes use of a two-layer electron-sensitive resist. This technique enables producing, via lift-off processing, 40 nm wide Au lines, separated 80 nm center-to-center on thick silicon substrates. The process is compatible with oblique evaporation techniques so that high accuracy alignment can be obtained in multiple-layer device structures. Superconducting tunnel junctions with areas as small as 10** minus **1**0cm**2 have been fabricated with this process. Utilizing this lithography technique in conjunction with reactive ion etching, pedestals 100 nm wide by 300 nm deep were etched into silicon substrates.",

author = "Hu, {E. L.} and Jackel, {L. D.} and Howard, {R. E.} and Fetter, {L. A.} and P. Grabbe and Tennant, {D. M.}",

year = "1980",

language = "English (US)",

pages = "200--205",

note = "Proc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf ; Conference date: 11-05-1980 Through 16-05-1980",

}

TY - CONF

T1 - NEW METHODS OF FINE FEATURE FABRICATION USING E-BEAM LITHOGRAPHY.

AU - Hu, E. L.

AU - Jackel, L. D.

AU - Howard, R. E.

AU - Fetter, L. A.

AU - Grabbe, P.

AU - Tennant, D. M.

PY - 1980

Y1 - 1980

N2 - An e-beam writing technique has been developed, which makes use of a two-layer electron-sensitive resist. This technique enables producing, via lift-off processing, 40 nm wide Au lines, separated 80 nm center-to-center on thick silicon substrates. The process is compatible with oblique evaporation techniques so that high accuracy alignment can be obtained in multiple-layer device structures. Superconducting tunnel junctions with areas as small as 10** minus **1**0cm**2 have been fabricated with this process. Utilizing this lithography technique in conjunction with reactive ion etching, pedestals 100 nm wide by 300 nm deep were etched into silicon substrates.

AB - An e-beam writing technique has been developed, which makes use of a two-layer electron-sensitive resist. This technique enables producing, via lift-off processing, 40 nm wide Au lines, separated 80 nm center-to-center on thick silicon substrates. The process is compatible with oblique evaporation techniques so that high accuracy alignment can be obtained in multiple-layer device structures. Superconducting tunnel junctions with areas as small as 10** minus **1**0cm**2 have been fabricated with this process. Utilizing this lithography technique in conjunction with reactive ion etching, pedestals 100 nm wide by 300 nm deep were etched into silicon substrates.

UR - http://www.scopus.com/inward/record.url?scp=0019279708&partnerID=8YFLogxK

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M3 - Paper

AN - SCOPUS:0019279708

SP - 200

EP - 205

T2 - Proc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf

Y2 - 11 May 1980 through 16 May 1980

ER -

NEW METHODS OF FINE FEATURE FABRICATION USING E-BEAM LITHOGRAPHY.

Abstract

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All Science Journal Classification (ASJC) codes

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