Nickel ohmic contacts to p- and n-type 4H-SiC

L. G. Fursin, J. H. Zhao, M. Weiner

Research output: Contribution to journalArticlepeer-review

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The first demonstration of Ni ohmic contacts to both p+ and n+ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10-4 Ωcm2 and 10-6 Ωcm2 for p+ and n+ 4H-SiC, respectively, have been determined by the transfer length method.

Original languageEnglish (US)
Pages (from-to)1092-1093
Number of pages2
JournalElectronics Letters
Issue number17
StatePublished - Aug 16 2001

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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