The first demonstration of Ni ohmic contacts to both p+ and n+ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10-4 Ωcm2 and 10-6 Ωcm2 for p+ and n+ 4H-SiC, respectively, have been determined by the transfer length method.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering