Nitrous oxide gas phase chemistry during silicon oxynitride film growth

A. Gupta, S. Toby, E. P. Gusev, H. C. Lu, Y. Li, M. L. Green, T. Gustafsson, E. Garfunkel

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N2O gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of N2O, (ii) the gas composition over a 1000K - 1400K temperature range is as follows: N2 (65.3 - 59.3%); O2 (32.0 - 25.7%), NO (2.7 - 15.0%), (iii) the N2O decomposition obeys first-order kinetics, and the initial rate law for N2O decomposition is Rinit = 2k1[N2O] which rapidly changes to Rlate = k1[N2O] as the reaction proceeds, (iv) the branching ratio for the two reactions: N2O + O → 2NO and N2O → O N2 + O2 lies between 0.1 and 0.5 (0.1 < α < 0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N2O is 2.5 eV/molecule (2.4×102 kJ/mole), (vi) the rate law for NO formation is R = k1[N2O], and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3×102 kJ/mole).

Original languageEnglish (US)
Pages (from-to)103-115
Number of pages13
JournalProgress in Surface Science
Issue number1-4
StatePublished - 1998

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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