Nitrous oxide gas phase chemistry during silicon oxynitride film growth

A. Gupta; S. Toby; E. P. Gusev; H. C. Lu; Y. Li; M. L. Green; T. Gustafsson; E. Garfunkel

doi:10.1016/S0079-6816(98)00039-2

Nitrous oxide gas phase chemistry during silicon oxynitride film growth

A. Gupta, S. Toby, E. P. Gusev, H. C. Lu, Y. Li, M. L. Green, T. Gustafsson, E. Garfunkel

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Abstract

N₂O gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of N₂O, (ii) the gas composition over a 1000K - 1400K temperature range is as follows: N₂ (65.3 - 59.3%); O₂ (32.0 - 25.7%), NO (2.7 - 15.0%), (iii) the N₂O decomposition obeys first-order kinetics, and the initial rate law for N₂O decomposition is R_init = 2k₁[N₂O] which rapidly changes to R_late = k₁[N₂O] as the reaction proceeds, (iv) the branching ratio for the two reactions: N₂O + O → 2NO and N₂O → O N₂ + O₂ lies between 0.1 and 0.5 (0.1 < α < 0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N₂O is 2.5 eV/molecule (2.4×10² kJ/mole), (vi) the rate law for NO formation is R = k₁[N₂O], and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3×10² kJ/mole).

Original language	English (US)
Pages (from-to)	103-115
Number of pages	13
Journal	Progress in Surface Science
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0079-6816(98)00039-2
State	Published - 1998

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Nitrous oxide gas phase chemistry during silicon oxynitride film growth",

abstract = "N2O gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of N2O, (ii) the gas composition over a 1000K - 1400K temperature range is as follows: N2 (65.3 - 59.3%); O2 (32.0 - 25.7%), NO (2.7 - 15.0%), (iii) the N2O decomposition obeys first-order kinetics, and the initial rate law for N2O decomposition is Rinit = 2k1[N2O] which rapidly changes to Rlate = k1[N2O] as the reaction proceeds, (iv) the branching ratio for the two reactions: N2O + O → 2NO and N2O → O N2 + O2 lies between 0.1 and 0.5 (0.1 < α < 0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N2O is 2.5 eV/molecule (2.4×102 kJ/mole), (vi) the rate law for NO formation is R = k1[N2O], and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3×102 kJ/mole).",

author = "A. Gupta and S. Toby and Gusev, {E. P.} and Lu, {H. C.} and Y. Li and Green, {M. L.} and T. Gustafsson and E. Garfunkel",

year = "1998",

doi = "10.1016/S0079-6816(98)00039-2",

language = "English (US)",

volume = "59",

pages = "103--115",

journal = "Progress in Surface Science",

issn = "0079-6816",

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T1 - Nitrous oxide gas phase chemistry during silicon oxynitride film growth

AU - Gupta, A.

AU - Toby, S.

AU - Gusev, E. P.

AU - Lu, H. C.

AU - Li, Y.

AU - Green, M. L.

AU - Gustafsson, T.

AU - Garfunkel, E.

PY - 1998

Y1 - 1998

N2 - N2O gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of N2O, (ii) the gas composition over a 1000K - 1400K temperature range is as follows: N2 (65.3 - 59.3%); O2 (32.0 - 25.7%), NO (2.7 - 15.0%), (iii) the N2O decomposition obeys first-order kinetics, and the initial rate law for N2O decomposition is Rinit = 2k1[N2O] which rapidly changes to Rlate = k1[N2O] as the reaction proceeds, (iv) the branching ratio for the two reactions: N2O + O → 2NO and N2O → O N2 + O2 lies between 0.1 and 0.5 (0.1 < α < 0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N2O is 2.5 eV/molecule (2.4×102 kJ/mole), (vi) the rate law for NO formation is R = k1[N2O], and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3×102 kJ/mole).

AB - N2O gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of N2O, (ii) the gas composition over a 1000K - 1400K temperature range is as follows: N2 (65.3 - 59.3%); O2 (32.0 - 25.7%), NO (2.7 - 15.0%), (iii) the N2O decomposition obeys first-order kinetics, and the initial rate law for N2O decomposition is Rinit = 2k1[N2O] which rapidly changes to Rlate = k1[N2O] as the reaction proceeds, (iv) the branching ratio for the two reactions: N2O + O → 2NO and N2O → O N2 + O2 lies between 0.1 and 0.5 (0.1 < α < 0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N2O is 2.5 eV/molecule (2.4×102 kJ/mole), (vi) the rate law for NO formation is R = k1[N2O], and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3×102 kJ/mole).

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JO - Progress in Surface Science

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ER -

Nitrous oxide gas phase chemistry during silicon oxynitride film growth

Abstract

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