Non-alloyed ohmic contacts on rapid thermally Zn diffused GaAs

T. S. Kalkur, Y. C. Lu, C. A. Araujo

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Rapid thermal diffusion of zinc into undoped semi-insulating GaAs substrates from spin-on zinc silica film is performed in A.G. Associates Heat pulse 410 system with tungsten-halogen lamps as the heat source. The Zn diffused layers were electrically characterised by Van der Pauw measurements and showed the formation of p+ layer. The surface morphology of the diffused layers were observed by optical microscope and scanning electron microscope. The depth profiling of diffused layers by secondary ion microscopy showed considerable diffusion of Si along with Zn. Radio frequency sputter depositing Si3N4 was found to be a good diffusion barrier for Zn diffussion. Non-alloyed ohmic contact with low contact resistivity was implemented on these Zn diffused layers.

Original languageEnglish (US)
Pages (from-to)281-285
Number of pages5
JournalSolid State Electronics
Volume32
Issue number4
DOIs
StatePublished - Apr 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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