Nonalloyed Al ohmic contacts to Mg x Zn 1-x O

H. Sheng, N. W. Emanetoglu, S. Muthukumar, S. Feng, Yicheng Lu

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Al nonalloyed ohmic contacts were fabricated and characterized on Mg x Zn 1-x O (0 ≤ × ≤ 0.34) epilayers, which were grown on R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). Specific contact resistances were evaluated by the transmission line method (TLM). A specific contact resistance of 2.5 × 10 -5 Ωcm 2 was obtained for Al contact to ZnO with an electron concentration of 1.6 × 10 17 cm -3 . The current flow mechanism was studied by investigating the dependence of specific contact resistances on electron concentration and on temperature. For Al contact to Mg 0.34 Zn 0.66 O, specific contact resistance values are two orders of magnitude larger than that of Al ohmic contacts to ZnO.

Original languageEnglish (US)
Pages (from-to)811-814
Number of pages4
JournalJournal of Electronic Materials
Volume31
Issue number7
DOIs
StatePublished - Jan 1 2002

Fingerprint

Ohmic contacts
Contact resistance
contact resistance
electric contacts
Organic Chemicals
Electrons
Aluminum Oxide
Epilayers
Organic chemicals
Sapphire
transmission lines
metalorganic chemical vapor deposition
Chemical vapor deposition
Electric lines
sapphire
electrons
Metals
Substrates
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Sheng, H. ; Emanetoglu, N. W. ; Muthukumar, S. ; Feng, S. ; Lu, Yicheng. / Nonalloyed Al ohmic contacts to Mg x Zn 1-x O In: Journal of Electronic Materials. 2002 ; Vol. 31, No. 7. pp. 811-814.
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Sheng, H, Emanetoglu, NW, Muthukumar, S, Feng, S & Lu, Y 2002, ' Nonalloyed Al ohmic contacts to Mg x Zn 1-x O ', Journal of Electronic Materials, vol. 31, no. 7, pp. 811-814. https://doi.org/10.1007/s11664-002-0242-0

Nonalloyed Al ohmic contacts to Mg x Zn 1-x O . / Sheng, H.; Emanetoglu, N. W.; Muthukumar, S.; Feng, S.; Lu, Yicheng.

In: Journal of Electronic Materials, Vol. 31, No. 7, 01.01.2002, p. 811-814.

Research output: Contribution to journalArticle

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T1 - Nonalloyed Al ohmic contacts to Mg x Zn 1-x O

AU - Sheng, H.

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AU - Muthukumar, S.

AU - Feng, S.

AU - Lu, Yicheng

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AB - Al nonalloyed ohmic contacts were fabricated and characterized on Mg x Zn 1-x O (0 ≤ × ≤ 0.34) epilayers, which were grown on R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). Specific contact resistances were evaluated by the transmission line method (TLM). A specific contact resistance of 2.5 × 10 -5 Ωcm 2 was obtained for Al contact to ZnO with an electron concentration of 1.6 × 10 17 cm -3 . The current flow mechanism was studied by investigating the dependence of specific contact resistances on electron concentration and on temperature. For Al contact to Mg 0.34 Zn 0.66 O, specific contact resistance values are two orders of magnitude larger than that of Al ohmic contacts to ZnO.

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