Ohmic contacts produced by laser-annealing Te-implanted GaAs

P. A. Barnes; H. J. Leamy; J. M. Poate; S. D. Ferris; J. S. Williams; G. K. Celler

doi:10.1063/1.90237

Ohmic contacts produced by laser-annealing Te-implanted GaAs

P. A. Barnes, H. J. Leamy, J. M. Poate, S. D. Ferris, J. S. Williams, G. K. Celler

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

We report the formation of Ohmic contacts to high-dose (∼10 ¹⁶ cm^-2) Te-implanted n-type GaAs annealed with a Q-switched Nd: YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific contact resistance r _c≃2×10^-5 Ω cm² were obtained by first removing the surface Ga by an HCl etch and then backsputtering to remove 50 Å of GaAs, thereby exposing a surface of high Te concentration.

Original language	English (US)
Pages (from-to)	965-967
Number of pages	3
Journal	Applied Physics Letters
Volume	33
Issue number	11
DOIs	https://doi.org/10.1063/1.90237
State	Published - 1978
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.90237

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@article{7e30210a71ca461fb7e2818c36bde599,

title = "Ohmic contacts produced by laser-annealing Te-implanted GaAs",

abstract = "We report the formation of Ohmic contacts to high-dose (∼10 16 cm-2) Te-implanted n-type GaAs annealed with a Q-switched Nd: YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific contact resistance r c≃2×10-5 Ω cm2 were obtained by first removing the surface Ga by an HCl etch and then backsputtering to remove 50 {\AA} of GaAs, thereby exposing a surface of high Te concentration.",

author = "Barnes, {P. A.} and Leamy, {H. J.} and Poate, {J. M.} and Ferris, {S. D.} and Williams, {J. S.} and Celler, {G. K.}",

year = "1978",

doi = "10.1063/1.90237",

language = "English (US)",

volume = "33",

pages = "965--967",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Ohmic contacts produced by laser-annealing Te-implanted GaAs

AU - Barnes, P. A.

AU - Leamy, H. J.

AU - Poate, J. M.

AU - Ferris, S. D.

AU - Williams, J. S.

AU - Celler, G. K.

PY - 1978

Y1 - 1978

N2 - We report the formation of Ohmic contacts to high-dose (∼10 16 cm-2) Te-implanted n-type GaAs annealed with a Q-switched Nd: YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific contact resistance r c≃2×10-5 Ω cm2 were obtained by first removing the surface Ga by an HCl etch and then backsputtering to remove 50 Å of GaAs, thereby exposing a surface of high Te concentration.

AB - We report the formation of Ohmic contacts to high-dose (∼10 16 cm-2) Te-implanted n-type GaAs annealed with a Q-switched Nd: YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific contact resistance r c≃2×10-5 Ω cm2 were obtained by first removing the surface Ga by an HCl etch and then backsputtering to remove 50 Å of GaAs, thereby exposing a surface of high Te concentration.

UR - http://www.scopus.com/inward/record.url?scp=0347443190&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347443190&partnerID=8YFLogxK

U2 - 10.1063/1.90237

DO - 10.1063/1.90237

M3 - Article

AN - SCOPUS:0347443190

SN - 0003-6951

VL - 33

SP - 965

EP - 967

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Ohmic contacts produced by laser-annealing Te-implanted GaAs

Abstract

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