Ohmic contacts produced by laser-annealing Te-implanted GaAs

P. A. Barnes, H. J. Leamy, J. M. Poate, S. D. Ferris, J. S. Williams, G. K. Celler

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

We report the formation of Ohmic contacts to high-dose (∼10 16 cm-2) Te-implanted n-type GaAs annealed with a Q-switched Nd: YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific contact resistance r c≃2×10-5 Ω cm2 were obtained by first removing the surface Ga by an HCl etch and then backsputtering to remove 50 Å of GaAs, thereby exposing a surface of high Te concentration.

Original languageEnglish (US)
Pages (from-to)965-967
Number of pages3
JournalApplied Physics Letters
Volume33
Issue number11
DOIs
StatePublished - 1978
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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