Ohmic contacts to p+-GaAs and Al0.26Ga0.74As

W. Y. Han, M. W. Cole, L. M. Casas, A. DeAnni, M. Wade, K. A. Jones, A. Lapore, Y. Lu, L. W. Yang

Research output: Contribution to journalConference articlepeer-review


Ohmic contacts, with metallization scheme of Pd/Ge/Ti/Pt, were formed on heavily carbon doped GaAs and AlxGa1-xAs. The lowest specific contact resistances were 4.7 × 10-7 and 8.9× 10-6 Ω-cm2 for the p+-GaAs and Al0.26Ga0.74As. The p+-GaAs and Al0.26Ga0.74As were doped with carbon to 5 × 1019 and 2 × 1019 cm-3, respectively. Interfacial reactions and elemental diffusion of the contacts were investigated via transmission electron microscopy and Auger electron spectrometry with depth profiles.

Original languageEnglish (US)
Pages (from-to)301-306
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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