Ohmic contacts to p+-GaAs and Al0.26Ga0.74As

W. Y. Han; M. W. Cole; L. M. Casas; A. DeAnni; M. Wade; K. A. Jones; A. Lapore; Y. Lu; L. W. Yang

Ohmic contacts to p⁺-GaAs and Al_0.26Ga_0.74As

W. Y. Han, M. W. Cole, L. M. Casas, A. DeAnni, M. Wade, K. A. Jones, A. Lapore, Y. Lu, L. W. Yang

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ohmic contacts, with metallization scheme of Pd/Ge/Ti/Pt, were formed on heavily carbon doped GaAs and Al_xGa_1-xAs. The lowest specific contact resistances were 4.7 × 10^-7 and 8.9× 10^-6 Ω-cm² for the p⁺-GaAs and Al_0.26Ga_0.74As. The p⁺-GaAs and Al_0.26Ga_0.74As were doped with carbon to 5 × 10¹⁹ and 2 × 10¹⁹ cm^-3, respectively. Interfacial reactions and elemental diffusion of the contacts were investigated via transmission electron microscopy and Auger electron spectrometry with depth profiles.

Original language	English (US)
Pages (from-to)	301-306
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	337
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{e7371d8304834707a6636b97cc6a3dbc,

title = "Ohmic contacts to p+-GaAs and Al0.26Ga0.74As",

abstract = "Ohmic contacts, with metallization scheme of Pd/Ge/Ti/Pt, were formed on heavily carbon doped GaAs and AlxGa1-xAs. The lowest specific contact resistances were 4.7 × 10-7 and 8.9× 10-6 Ω-cm2 for the p+-GaAs and Al0.26Ga0.74As. The p+-GaAs and Al0.26Ga0.74As were doped with carbon to 5 × 1019 and 2 × 1019 cm-3, respectively. Interfacial reactions and elemental diffusion of the contacts were investigated via transmission electron microscopy and Auger electron spectrometry with depth profiles.",

author = "Han, {W. Y.} and Cole, {M. W.} and Casas, {L. M.} and A. DeAnni and M. Wade and Jones, {K. A.} and A. Lapore and Y. Lu and Yang, {L. W.}",

year = "1994",

language = "English (US)",

volume = "337",

pages = "301--306",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

}

TY - JOUR

T1 - Ohmic contacts to p+-GaAs and Al0.26Ga0.74As

AU - Han, W. Y.

AU - Cole, M. W.

AU - Casas, L. M.

AU - DeAnni, A.

AU - Wade, M.

AU - Jones, K. A.

AU - Lapore, A.

AU - Lu, Y.

AU - Yang, L. W.

PY - 1994

Y1 - 1994

N2 - Ohmic contacts, with metallization scheme of Pd/Ge/Ti/Pt, were formed on heavily carbon doped GaAs and AlxGa1-xAs. The lowest specific contact resistances were 4.7 × 10-7 and 8.9× 10-6 Ω-cm2 for the p+-GaAs and Al0.26Ga0.74As. The p+-GaAs and Al0.26Ga0.74As were doped with carbon to 5 × 1019 and 2 × 1019 cm-3, respectively. Interfacial reactions and elemental diffusion of the contacts were investigated via transmission electron microscopy and Auger electron spectrometry with depth profiles.

AB - Ohmic contacts, with metallization scheme of Pd/Ge/Ti/Pt, were formed on heavily carbon doped GaAs and AlxGa1-xAs. The lowest specific contact resistances were 4.7 × 10-7 and 8.9× 10-6 Ω-cm2 for the p+-GaAs and Al0.26Ga0.74As. The p+-GaAs and Al0.26Ga0.74As were doped with carbon to 5 × 1019 and 2 × 1019 cm-3, respectively. Interfacial reactions and elemental diffusion of the contacts were investigated via transmission electron microscopy and Auger electron spectrometry with depth profiles.

UR - http://www.scopus.com/inward/record.url?scp=0028562173&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028562173&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028562173

SN - 0272-9172

VL - 337

SP - 301

EP - 306

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

Ohmic contacts to p⁺-GaAs and Al_0.26Ga_0.74As

Abstract

All Science Journal Classification (ASJC) codes

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