On the carrier profiling of GaAsSb/GaAs heterostructures

J. H. Zhao, A. Z. Li, T. E. Schlesinger, A. G. Milnes

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Carrier profiles of MBE grown Ga(As,Sb)/GaAs heterostructures were studied. In low Sb content samples of Ga(As,Sb)/GaAs grown by MBE the experimentally measured carrier profiles exhibit double dips in concentration, whereas a single large dip is ob-tained for higher Sb content with larger lattice-mismatched samples. The capacitance voltage(C-V) carrier profile of a Schottky barrier n- N heterojunction of Au/n-GaAsSb/N-GaAs has been modeled and double dips occur when nonuniform doping is present which may explain the experimentally observed double dips in a GaAs0.95Sb0.05/GaAs specimen. For large lattice mismatch and therefore large heterointerface charge density in the model, the accumulation peak due to ΔEc is shown to be overwhelmed by a pro-nounced single dip as observed in higher Sb content samples such as GaAs0.91Sb0.09/ GaAs and GaAs/GaAs0.9Sb0.1.

Original languageEnglish (US)
Pages (from-to)255-261
Number of pages7
JournalJournal of Electronic Materials
Volume17
Issue number3
DOIs
StatePublished - May 1 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • GaAs
  • GaAsSb
  • Heterostructures
  • Schottky barrier
  • molecular beam epitaxy

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