Carrier profiles of MBE grown Ga(As,Sb)/GaAs heterostructures were studied. In low Sb content samples of Ga(As,Sb)/GaAs grown by MBE the experimentally measured carrier profiles exhibit double dips in concentration, whereas a single large dip is ob-tained for higher Sb content with larger lattice-mismatched samples. The capacitance voltage(C-V) carrier profile of a Schottky barrier n- N heterojunction of Au/n-GaAsSb/N-GaAs has been modeled and double dips occur when nonuniform doping is present which may explain the experimentally observed double dips in a GaAs0.95Sb0.05/GaAs specimen. For large lattice mismatch and therefore large heterointerface charge density in the model, the accumulation peak due to ΔEc is shown to be overwhelmed by a pro-nounced single dip as observed in higher Sb content samples such as GaAs0.91Sb0.09/ GaAs and GaAs/GaAs0.9Sb0.1.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
- Schottky barrier
- molecular beam epitaxy