On the RF properties of weakly saturated SiGe HBTs and their potential use in ultralow-voltage circuits

Sachin Seth, Laleh Najafizadeh, John D. Cressler

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We investigate, for the first time, the feasibility of operating silicongermanium (SiGe) heterojunction bipolar transistors (HBTs) in a weakly saturated bias regime to enable ultralow-voltage RF front-end design. Measured dc, ac, and RF characteristics of third-generation high-performance SiGe HBTs operating in weak saturation are presented. Robust RF operation of 0.12× 6.0μm2 SiGe HBTs are demonstrated in a commonemitter configuration at collector-to-emitter voltages above 0.15 V. A noise figure of 1.33 dB and an input third-order intercept point above -8 dBm for a 3-GHz input tone are achieved at 0.30 V. These results have potential implications for RF circuits used in severely power-constrained systems.

Original languageEnglish (US)
Article number5640643
Pages (from-to)3-5
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number1
DOIs
StatePublished - Jan 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Biomedical telemetry
  • RF circuit design
  • SiGe HBTs
  • heterojunction bipolar transistors (HBTs)
  • low-voltage operation
  • silicongermanium (SiGe)

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