@inproceedings{c05df591ac724eec8784331338a56825,
title = "On the stability and oxidation of single crystal (100) InAs surfaces",
abstract = "We report on a method to prepare clean and smooth surfaces of InAs (100) along with in-situ high-resolution studies of the nanoscale oxidation of the pristine surface. A hydrogen molecular cleaning (HMC) technique has been developed that results in complete removal of native oxide This has been verified in-depth by in-situ nuclear reaction analysis (NRA) using the 16O(d,p) 17O reaction and X-ray photoelectron spectroscopy. Further, ion channeling studies have been performed to verify atomically smooth surfaces after post cleaning We derive kinetic boundaries for oxide formation on cleaned InAs surfaces using NRA measurements.",
author = "Chang, \{C. L.\} and V. Shutthanandan and Singhal, \{S. C.\} and S. Ramanathan",
year = "2007",
doi = "10.1149/1.2779577",
language = "English (US)",
isbn = "9781566775700",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "409--419",
booktitle = "ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks",
edition = "4",
note = "5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting ; Conference date: 08-10-2007 Through 10-10-2007",
}