Abstract
The conductance of narrow (0.1-μm) silicon inversion layers has been measured at low temperatures. A divergent, nonmetallic decrease of conductance is observed below 30 K, in excellent quantitative agreement with the combined theories of weak localization and interaction effects in their one-dimensional form, if one assumes parameters comparable to those observed in wide (two-dimensional) inversion layers. In this novel experimental system both localization and interaction effects are present and comparable in size.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 951-955 |
| Number of pages | 5 |
| Journal | Physical review letters |
| Volume | 49 |
| Issue number | 13 |
| DOIs | |
| State | Published - 1982 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)