One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion Layers

W. J. Skocpol, L. D. Jackel, E. L. Hu, R. E. Howard, L. A. Fetter

Research output: Contribution to journalArticlepeer-review

133 Scopus citations

Abstract

The conductance of narrow (0.1-μm) silicon inversion layers has been measured at low temperatures. A divergent, nonmetallic decrease of conductance is observed below 30 K, in excellent quantitative agreement with the combined theories of weak localization and interaction effects in their one-dimensional form, if one assumes parameters comparable to those observed in wide (two-dimensional) inversion layers. In this novel experimental system both localization and interaction effects are present and comparable in size.

Original languageEnglish (US)
Pages (from-to)951-955
Number of pages5
JournalPhysical review letters
Volume49
Issue number13
DOIs
StatePublished - 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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