Operation of power semiconductors at their thermal limit

D. E. Piccone; R. G. Rodrigues; W. H. Tobin; L. W. Willinger; J. A. Barrow; T. A. Hansen; J. Zhao; L. Cao

Operation of power semiconductors at their thermal limit

D. E. Piccone, R. G. Rodrigues, W. H. Tobin, L. W. Willinger, J. A. Barrow, T. A. Hansen, J. Zhao, L. Cao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

Based on experience gained with Si power devices, a review is presented of some of the thermal limitations to the operation of power semiconductor devices, which are encountered in steady state operation, but also, much more stringently, under switching and pulse power transients. Devices based on SiC are expected to be capable of steady-state operation at much higher temperature than Si devices. Here we discuss predictable failure mechanisms of SiC devices at the extremely high temperatures reached under surge conditions, and their life expectancy under thermal cycling operation.

Original language	English (US)
Pages (from-to)	942-953
Number of pages	12
Journal	Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
Volume	2
State	Published - 1998
Event	Proceedings of the 1998 IEEE Industry Applications Conference. Part 1 (of 3) - St.Louis, MO, USA Duration: Oct 12 1998 → Oct 15 1998

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

@article{8082a30cc7dc479bad0f738c029b4773,

title = "Operation of power semiconductors at their thermal limit",

abstract = "Based on experience gained with Si power devices, a review is presented of some of the thermal limitations to the operation of power semiconductor devices, which are encountered in steady state operation, but also, much more stringently, under switching and pulse power transients. Devices based on SiC are expected to be capable of steady-state operation at much higher temperature than Si devices. Here we discuss predictable failure mechanisms of SiC devices at the extremely high temperatures reached under surge conditions, and their life expectancy under thermal cycling operation.",

author = "Piccone, {D. E.} and Rodrigues, {R. G.} and Tobin, {W. H.} and Willinger, {L. W.} and Barrow, {J. A.} and Hansen, {T. A.} and J. Zhao and L. Cao",

year = "1998",

language = "English (US)",

volume = "2",

pages = "942--953",

journal = "Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)",

issn = "0197-2618",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE Industry Applications Conference. Part 1 (of 3) ; Conference date: 12-10-1998 Through 15-10-1998",

}

TY - JOUR

T1 - Operation of power semiconductors at their thermal limit

AU - Piccone, D. E.

AU - Rodrigues, R. G.

AU - Tobin, W. H.

AU - Willinger, L. W.

AU - Barrow, J. A.

AU - Hansen, T. A.

AU - Zhao, J.

AU - Cao, L.

PY - 1998

Y1 - 1998

N2 - Based on experience gained with Si power devices, a review is presented of some of the thermal limitations to the operation of power semiconductor devices, which are encountered in steady state operation, but also, much more stringently, under switching and pulse power transients. Devices based on SiC are expected to be capable of steady-state operation at much higher temperature than Si devices. Here we discuss predictable failure mechanisms of SiC devices at the extremely high temperatures reached under surge conditions, and their life expectancy under thermal cycling operation.

AB - Based on experience gained with Si power devices, a review is presented of some of the thermal limitations to the operation of power semiconductor devices, which are encountered in steady state operation, but also, much more stringently, under switching and pulse power transients. Devices based on SiC are expected to be capable of steady-state operation at much higher temperature than Si devices. Here we discuss predictable failure mechanisms of SiC devices at the extremely high temperatures reached under surge conditions, and their life expectancy under thermal cycling operation.

UR - http://www.scopus.com/inward/record.url?scp=0032308848&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032308848&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032308848

SN - 0197-2618

VL - 2

SP - 942

EP - 953

JO - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

JF - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

T2 - Proceedings of the 1998 IEEE Industry Applications Conference. Part 1 (of 3)

Y2 - 12 October 1998 through 15 October 1998

ER -

Operation of power semiconductors at their thermal limit

Abstract

All Science Journal Classification (ASJC) codes

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