Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain

H. Shen; M. Wraback; J. Pamulapati; P. G. Newman; M. Dutta; Y. Lu; H. C. Kuo

doi:10.1103/PhysRevB.47.13933

Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, H. C. Kuo

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The effect of thermally induced in-plane uniaxial strain on the optical properties of a GaAs/AlxGa1-xAs multiple quantum well (MQW) has been studied in detail. The strain was produced by bonding the MQW thin films to LiTaO3, a transparent substrate which possesses a direction-dependent thermal expansion coefficient. At temperatures different from the bonding temperature we have observed an anisotropy in the optical properties of the MQW due to the strain-induced lowering of its in-plane fourfold rotation symmetry. The anisotropic absorption and birefringence for light incident normal to such a MQW structure have been determined and compared to a theory involving the mixing of the valence subbands.

Original language	English (US)
Pages (from-to)	13933-13936
Number of pages	4
Journal	Physical Review B
Volume	47
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.47.13933
State	Published - 1993

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.47.13933

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@article{ec325b4a70b649e983b6dee1aa20f002,

title = "Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain",

abstract = "The effect of thermally induced in-plane uniaxial strain on the optical properties of a GaAs/AlxGa1-xAs multiple quantum well (MQW) has been studied in detail. The strain was produced by bonding the MQW thin films to LiTaO3, a transparent substrate which possesses a direction-dependent thermal expansion coefficient. At temperatures different from the bonding temperature we have observed an anisotropy in the optical properties of the MQW due to the strain-induced lowering of its in-plane fourfold rotation symmetry. The anisotropic absorption and birefringence for light incident normal to such a MQW structure have been determined and compared to a theory involving the mixing of the valence subbands.",

author = "H. Shen and M. Wraback and J. Pamulapati and Newman, {P. G.} and M. Dutta and Y. Lu and Kuo, {H. C.}",

year = "1993",

doi = "10.1103/PhysRevB.47.13933",

language = "English (US)",

volume = "47",

pages = "13933--13936",

journal = "Physical Review B-Condensed Matter",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain

AU - Shen, H.

AU - Wraback, M.

AU - Pamulapati, J.

AU - Newman, P. G.

AU - Dutta, M.

AU - Lu, Y.

AU - Kuo, H. C.

PY - 1993

Y1 - 1993

N2 - The effect of thermally induced in-plane uniaxial strain on the optical properties of a GaAs/AlxGa1-xAs multiple quantum well (MQW) has been studied in detail. The strain was produced by bonding the MQW thin films to LiTaO3, a transparent substrate which possesses a direction-dependent thermal expansion coefficient. At temperatures different from the bonding temperature we have observed an anisotropy in the optical properties of the MQW due to the strain-induced lowering of its in-plane fourfold rotation symmetry. The anisotropic absorption and birefringence for light incident normal to such a MQW structure have been determined and compared to a theory involving the mixing of the valence subbands.

AB - The effect of thermally induced in-plane uniaxial strain on the optical properties of a GaAs/AlxGa1-xAs multiple quantum well (MQW) has been studied in detail. The strain was produced by bonding the MQW thin films to LiTaO3, a transparent substrate which possesses a direction-dependent thermal expansion coefficient. At temperatures different from the bonding temperature we have observed an anisotropy in the optical properties of the MQW due to the strain-induced lowering of its in-plane fourfold rotation symmetry. The anisotropic absorption and birefringence for light incident normal to such a MQW structure have been determined and compared to a theory involving the mixing of the valence subbands.

UR - http://www.scopus.com/inward/record.url?scp=0001510853&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001510853&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.47.13933

DO - 10.1103/PhysRevB.47.13933

M3 - Article

AN - SCOPUS:0001510853

SN - 0163-1829

VL - 47

SP - 13933

EP - 13936

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

IS - 20

ER -

Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain

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