Optical characterization of ion-implanted 4H-SiC

Z. C. Feng, F. Yan, W. Y. Chang, J. H. Zhao, J. Lin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

4H-SiC structures with both Al+ and C+Al+ implantation have been prepared by multiple energy implantation. They were studied by photoluminescence, optical transmission, micro-Raman scattering and Fourier transform infrared spectroscopy. The damage and amorphization of SiC layer by ion-implantation, and the elimination or suppression of the implantation induced amorphous layer via high temperature annealing are observed. After annealing, the solid-phase recrystallization is confirmed. The advantages of C/Al co-implantation over Al only ion-implantation is identified.

Original languageEnglish (US)
Pages (from-to)647-650
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
DOIs
StatePublished - Jan 1 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • 4H-SiC
  • Al-C ions
  • Annealing
  • Crystallization
  • FTIR
  • Multi-energy implantation
  • Optical transmission
  • Photoluminescence
  • Raman scattering

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