A Nd3+ -doped Bi4 Ge3 O12 (BGO) single crystal was grown by the modified Czochralski method. Using the 4f -energy matrix diagonalization procedure various interaction parameters viz. Slater-Condon (F2, F4, and F6), spin-orbit (ξ), two body interaction (α, β, and γ), Judd parameter (T2, T3, T4, T6, T7, and T8), spin-other-orbit parameters (M0, M2, and M4) and electrostatically correlated spin-orbit interaction parameters (P2, P4, and P6), and the crystal-field parameters (BqK) were evaluated. The crystal-field analysis has also been carried out for Nd3+: Bi4 Si3 O12, Eu3+: BGO, and Er3+: BGO systems. The potential of a BGO crystal as a laser crystal for 1064.4 and 1341.8 nm was established by quantitative analysis of the absorption, emission spectrum, and fluorescence decay characteristics. Judd-Ofelt parametrization was employed to compute the radiative spectral parameters such as radiative transition probabilities, fluorescence branching ratios, stimulated emission cross sections, and quantum efficiencies of the observed bands in the fluorescence spectrum. Using the measured radiative properties, 100% quantum efficiency was obtained for the principal emission band at 1064.4 nm with an effective stimulated emission cross section of 1.34× 10-19 cm2. The high stimulated emission cross section, fluorescence branching ratio, and quantum efficiency indicate that the Nd3+ -doped BGO crystal can be a suitable host for 1064.4 and 1341.8 nm emission wavelengths in Q -switched laser applications.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Aug 4 2006|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics