Optical properties of single crystal Nd3+ -doped Bi4 Ge3 O12: Laser transitions at room and low temperature

G. A. Kumar, Richard Riman, Alexander A. Kaminskii, R. Praveena, C. K. Jayasankar, I. K. Bae, S. C. Chae, Y. N. Jang

Research output: Contribution to journalArticle

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Abstract

A Nd3+ -doped Bi4 Ge3 O12 (BGO) single crystal was grown by the modified Czochralski method. Using the 4f -energy matrix diagonalization procedure various interaction parameters viz. Slater-Condon (F2, F4, and F6), spin-orbit (ξ), two body interaction (α, β, and γ), Judd parameter (T2, T3, T4, T6, T7, and T8), spin-other-orbit parameters (M0, M2, and M4) and electrostatically correlated spin-orbit interaction parameters (P2, P4, and P6), and the crystal-field parameters (BqK) were evaluated. The crystal-field analysis has also been carried out for Nd3+: Bi4 Si3 O12, Eu3+: BGO, and Er3+: BGO systems. The potential of a BGO crystal as a laser crystal for 1064.4 and 1341.8 nm was established by quantitative analysis of the absorption, emission spectrum, and fluorescence decay characteristics. Judd-Ofelt parametrization was employed to compute the radiative spectral parameters such as radiative transition probabilities, fluorescence branching ratios, stimulated emission cross sections, and quantum efficiencies of the observed bands in the fluorescence spectrum. Using the measured radiative properties, 100% quantum efficiency was obtained for the principal emission band at 1064.4 nm with an effective stimulated emission cross section of 1.34× 10-19 cm2. The high stimulated emission cross section, fluorescence branching ratio, and quantum efficiency indicate that the Nd3+ -doped BGO crystal can be a suitable host for 1064.4 and 1341.8 nm emission wavelengths in Q -switched laser applications.

Original languageEnglish (US)
Article number014306
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number1
DOIs
StatePublished - Aug 4 2006

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Optical properties
Stimulated emission
Single crystals
optical properties
Crystals
Fluorescence
Quantum efficiency
Lasers
single crystals
room temperature
stimulated emission
Orbits
lasers
quantum efficiency
fluorescence
Temperature
crystal field theory
cross sections
Q switched lasers
Laser applications

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kumar, G. A. ; Riman, Richard ; Kaminskii, Alexander A. ; Praveena, R. ; Jayasankar, C. K. ; Bae, I. K. ; Chae, S. C. ; Jang, Y. N. / Optical properties of single crystal Nd3+ -doped Bi4 Ge3 O12 : Laser transitions at room and low temperature. In: Physical Review B - Condensed Matter and Materials Physics. 2006 ; Vol. 74, No. 1.
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title = "Optical properties of single crystal Nd3+ -doped Bi4 Ge3 O12: Laser transitions at room and low temperature",
abstract = "A Nd3+ -doped Bi4 Ge3 O12 (BGO) single crystal was grown by the modified Czochralski method. Using the 4f -energy matrix diagonalization procedure various interaction parameters viz. Slater-Condon (F2, F4, and F6), spin-orbit (ξ), two body interaction (α, β, and γ), Judd parameter (T2, T3, T4, T6, T7, and T8), spin-other-orbit parameters (M0, M2, and M4) and electrostatically correlated spin-orbit interaction parameters (P2, P4, and P6), and the crystal-field parameters (BqK) were evaluated. The crystal-field analysis has also been carried out for Nd3+: Bi4 Si3 O12, Eu3+: BGO, and Er3+: BGO systems. The potential of a BGO crystal as a laser crystal for 1064.4 and 1341.8 nm was established by quantitative analysis of the absorption, emission spectrum, and fluorescence decay characteristics. Judd-Ofelt parametrization was employed to compute the radiative spectral parameters such as radiative transition probabilities, fluorescence branching ratios, stimulated emission cross sections, and quantum efficiencies of the observed bands in the fluorescence spectrum. Using the measured radiative properties, 100{\%} quantum efficiency was obtained for the principal emission band at 1064.4 nm with an effective stimulated emission cross section of 1.34× 10-19 cm2. The high stimulated emission cross section, fluorescence branching ratio, and quantum efficiency indicate that the Nd3+ -doped BGO crystal can be a suitable host for 1064.4 and 1341.8 nm emission wavelengths in Q -switched laser applications.",
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Optical properties of single crystal Nd3+ -doped Bi4 Ge3 O12 : Laser transitions at room and low temperature. / Kumar, G. A.; Riman, Richard; Kaminskii, Alexander A.; Praveena, R.; Jayasankar, C. K.; Bae, I. K.; Chae, S. C.; Jang, Y. N.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 74, No. 1, 014306, 04.08.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical properties of single crystal Nd3+ -doped Bi4 Ge3 O12

T2 - Laser transitions at room and low temperature

AU - Kumar, G. A.

AU - Riman, Richard

AU - Kaminskii, Alexander A.

AU - Praveena, R.

AU - Jayasankar, C. K.

AU - Bae, I. K.

AU - Chae, S. C.

AU - Jang, Y. N.

PY - 2006/8/4

Y1 - 2006/8/4

N2 - A Nd3+ -doped Bi4 Ge3 O12 (BGO) single crystal was grown by the modified Czochralski method. Using the 4f -energy matrix diagonalization procedure various interaction parameters viz. Slater-Condon (F2, F4, and F6), spin-orbit (ξ), two body interaction (α, β, and γ), Judd parameter (T2, T3, T4, T6, T7, and T8), spin-other-orbit parameters (M0, M2, and M4) and electrostatically correlated spin-orbit interaction parameters (P2, P4, and P6), and the crystal-field parameters (BqK) were evaluated. The crystal-field analysis has also been carried out for Nd3+: Bi4 Si3 O12, Eu3+: BGO, and Er3+: BGO systems. The potential of a BGO crystal as a laser crystal for 1064.4 and 1341.8 nm was established by quantitative analysis of the absorption, emission spectrum, and fluorescence decay characteristics. Judd-Ofelt parametrization was employed to compute the radiative spectral parameters such as radiative transition probabilities, fluorescence branching ratios, stimulated emission cross sections, and quantum efficiencies of the observed bands in the fluorescence spectrum. Using the measured radiative properties, 100% quantum efficiency was obtained for the principal emission band at 1064.4 nm with an effective stimulated emission cross section of 1.34× 10-19 cm2. The high stimulated emission cross section, fluorescence branching ratio, and quantum efficiency indicate that the Nd3+ -doped BGO crystal can be a suitable host for 1064.4 and 1341.8 nm emission wavelengths in Q -switched laser applications.

AB - A Nd3+ -doped Bi4 Ge3 O12 (BGO) single crystal was grown by the modified Czochralski method. Using the 4f -energy matrix diagonalization procedure various interaction parameters viz. Slater-Condon (F2, F4, and F6), spin-orbit (ξ), two body interaction (α, β, and γ), Judd parameter (T2, T3, T4, T6, T7, and T8), spin-other-orbit parameters (M0, M2, and M4) and electrostatically correlated spin-orbit interaction parameters (P2, P4, and P6), and the crystal-field parameters (BqK) were evaluated. The crystal-field analysis has also been carried out for Nd3+: Bi4 Si3 O12, Eu3+: BGO, and Er3+: BGO systems. The potential of a BGO crystal as a laser crystal for 1064.4 and 1341.8 nm was established by quantitative analysis of the absorption, emission spectrum, and fluorescence decay characteristics. Judd-Ofelt parametrization was employed to compute the radiative spectral parameters such as radiative transition probabilities, fluorescence branching ratios, stimulated emission cross sections, and quantum efficiencies of the observed bands in the fluorescence spectrum. Using the measured radiative properties, 100% quantum efficiency was obtained for the principal emission band at 1064.4 nm with an effective stimulated emission cross section of 1.34× 10-19 cm2. The high stimulated emission cross section, fluorescence branching ratio, and quantum efficiency indicate that the Nd3+ -doped BGO crystal can be a suitable host for 1064.4 and 1341.8 nm emission wavelengths in Q -switched laser applications.

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