Optoelectronic properties for ZnO and related semiconductors in various nanoscale geometries

J. Yang, T. Yamanaka, K. Sun, M. A. Stroscioa, M. Dutta, J. Zhong, H. Chen, G. Saraf, Y. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Zinc oxide, ZnO, is a direct wide bandgap semiconductor, with a large exciton binding energy (60 meV). Many of its properties promise great potential for many optoelectronic device applications. In order to explore the nanoscale device applications and gain more understanding of the ZnO material, our research has focused on the optical characterization of several ZnO samples including both films and nanorods (nanotips) grown on different substrates. We will present experimental results of photoluminescence (PL) as a function of temperature and Raman scattering data at room temperature (RT). The spontaneous polarization in ZnO and GaN will be modeled and compared for these two similar wurtzite wide band gap materials. Finally, we will present the calculations of the electron and hole transmission mini bands in a three dimensional matrix of colloidal ZnO quantum dots and conductive polymers also a promising material in optoelectronic device applications.

Original languageEnglish (US)
Title of host publicationECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Pages149-160
Number of pages12
Edition2
DOIs
StatePublished - Dec 1 2007
Event46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
Duration: May 6 2007May 10 2007

Publication series

NameECS Transactions
Number2
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period5/6/075/10/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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