@inproceedings{51f134a98b804fa89e5c041503a8cd4f,
title = "Optoelectronic properties for ZnO and related semiconductors in various nanoscale geometries",
abstract = "Zinc oxide, ZnO, is a direct wide bandgap semiconductor, with a large exciton binding energy (60 meV). Many of its properties promise great potential for many optoelectronic device applications. In order to explore the nanoscale device applications and gain more understanding of the ZnO material, our research has focused on the optical characterization of several ZnO samples including both films and nanorods (nanotips) grown on different substrates. We will present experimental results of photoluminescence (PL) as a function of temperature and Raman scattering data at room temperature (RT). The spontaneous polarization in ZnO and GaN will be modeled and compared for these two similar wurtzite wide band gap materials. Finally, we will present the calculations of the electron and hole transmission mini bands in a three dimensional matrix of colloidal ZnO quantum dots and conductive polymers also a promising material in optoelectronic device applications.",
author = "J. Yang and T. Yamanaka and K. Sun and Stroscioa, {M. A.} and M. Dutta and J. Zhong and H. Chen and G. Saraf and Y. Lu",
year = "2007",
doi = "10.1149/1.2731181",
language = "English (US)",
isbn = "9781566775519",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "149--160",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}