Oxygen diffusion and reactions in Hf-based dielectrics

L. V. Goncharova; M. Dalponte; D. G. Starodub; T. Gustafsson; E. Garfunkel; P. S. Lysaght; B. Foran; J. Barnett; G. Bersuker

doi:10.1063/1.2221522

Oxygen diffusion and reactions in Hf-based dielectrics

L. V. Goncharova, M. Dalponte, D. G. Starodub, T. Gustafsson, E. Garfunkel, P. S. Lysaght, B. Foran, J. Barnett, G. Bersuker

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34 Scopus citations

Abstract

Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been investigated using medium energy ion scattering in combination with ¹⁸O ₂ isotopic tracing methods. Postgrowth oxidation of Hf-based films in an ¹⁸O ₂ atmosphere at 490-950°C results in O exchange in the film. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen increases with temperature and is suppressed by the SiO ₂ component. Films annealed prior to oxygen isotope exposure show complex incorporation behavior, which may be attributed to grain boundary defects, and SiO ₂ phase segregation.

Original language	English (US)
Article number	044108
Journal	Applied Physics Letters
Volume	89
Issue number	4
DOIs	https://doi.org/10.1063/1.2221522
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2221522

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title = "Oxygen diffusion and reactions in Hf-based dielectrics",

abstract = "Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been investigated using medium energy ion scattering in combination with 18O 2 isotopic tracing methods. Postgrowth oxidation of Hf-based films in an 18O 2 atmosphere at 490-950°C results in O exchange in the film. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen increases with temperature and is suppressed by the SiO 2 component. Films annealed prior to oxygen isotope exposure show complex incorporation behavior, which may be attributed to grain boundary defects, and SiO 2 phase segregation.",

author = "Goncharova, {L. V.} and M. Dalponte and Starodub, {D. G.} and T. Gustafsson and E. Garfunkel and Lysaght, {P. S.} and B. Foran and J. Barnett and G. Bersuker",

note = "Funding Information: The authors thank the SRC/Sematech FEP-TC, the NSF, and CAPES (Brazil) for financial support.",

year = "2006",

doi = "10.1063/1.2221522",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Oxygen diffusion and reactions in Hf-based dielectrics

AU - Goncharova, L. V.

AU - Dalponte, M.

AU - Starodub, D. G.

AU - Gustafsson, T.

AU - Garfunkel, E.

AU - Lysaght, P. S.

AU - Foran, B.

AU - Barnett, J.

AU - Bersuker, G.

N1 - Funding Information: The authors thank the SRC/Sematech FEP-TC, the NSF, and CAPES (Brazil) for financial support.

PY - 2006

Y1 - 2006

N2 - Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been investigated using medium energy ion scattering in combination with 18O 2 isotopic tracing methods. Postgrowth oxidation of Hf-based films in an 18O 2 atmosphere at 490-950°C results in O exchange in the film. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen increases with temperature and is suppressed by the SiO 2 component. Films annealed prior to oxygen isotope exposure show complex incorporation behavior, which may be attributed to grain boundary defects, and SiO 2 phase segregation.

AB - Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been investigated using medium energy ion scattering in combination with 18O 2 isotopic tracing methods. Postgrowth oxidation of Hf-based films in an 18O 2 atmosphere at 490-950°C results in O exchange in the film. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen increases with temperature and is suppressed by the SiO 2 component. Films annealed prior to oxygen isotope exposure show complex incorporation behavior, which may be attributed to grain boundary defects, and SiO 2 phase segregation.

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JF - Applied Physics Letters

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ER -

Oxygen diffusion and reactions in Hf-based dielectrics

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