Performance of 500 μm thick silicon microstrip detectors after irradiation

W. Adam, E. Berdermann, P. Bergonzo, G. Bertuccio, F. Bogani, E. Borchi, A. Brambilla, M. Bruzzi, C. Colledani, J. Conway, P. D'Angelo, W. Dabrowski, P. Delpierre, A. Deneuville, W. Dulinski, B. Van Eijk, A. Fallou, F. Fizzotti, F. Foulon, M. FriedlK. K. Gan, E. Gheeraert, G. Hallewell, S. Han, F. Hartjes, J. Hrubec, D. Husson, H. Kagan, D. Kania, J. Kaplon, R. Kass, T. Koeth, M. Krammer, A. Logiudice, R. Lu, L. Mac Lynne, C. Manfredotti, D. Meier, M. Mishina, L. Moroni, J. Noomen, A. Oh, L. S. Pan, M. Pernicka, A. Peitz, L. Perera, S. Pirollo, M. Procario, J. L. Riester, S. Roe, L. Rousseau, A. Rudge, J. Russ, S. Sala, M. Sampietro, S. Schnetzer, S. Sciortino, H. Stelzer, R. Stone, B. Suter, R. J. Tapper, R. Tesarek, W. Trischuk, D. Tromson, E. Vittone, A. M. Walsh, R. Wedenig, P. Weilhammer, M. Wetstein, C. White, W. Zeuner, M. Zoeller, R. Plano, S. V. Somalwar, G. B. Thomson

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


This paper investigates the performance of 500 μm thick silicon microstrip detectors before and after heavy irradiation. Prototype sensors, produced by STMicroelectronics, have been extensively studied using laboratory measurements, a radioactive source and a beam of minimum ionising particles. The comparison with a standard 300 μm sensor shows that the collected charge in thick devices scales linearly with thickness. By over-depleting the irradiated devices, the pre-irradiated charge collection efficiency is fully recovered. The measured noise is in good agreement with expectations. Although more work is needed, the paper shows that 500 μm thick devices are a promising technology for very large tracking systems.

Original languageEnglish (US)
Pages (from-to)739-743
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number3
StatePublished - Jan 11 2002
EventProceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K) - Firenze, Italy
Duration: Jun 28 2000Jun 30 2000

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


  • 6-inch technology
  • Radiation damage
  • Silicon microstrip detectors


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