Period-doubled structure for the 90° partial dislocation in silicon

J. Bennetto, J. W. Nunes, David Vanderbilt

Research output: Contribution to journalArticle

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Abstract

We suggest that the commonly accepted core structure of the 90° partial dislocation in Si may not be correct, and propose instead a period-doubled structure. We present local-density approximation, tight-binding, and classical Keating-model calculations, all of which indicate that the period-doubled structure is lower in energy. The new structure displays a broken mirror symmetry in addition to the period doubling, leading to a wide variety of possible solitonlike defects and kinks.

Original languageEnglish (US)
Pages (from-to)245-248
Number of pages4
JournalPhysical review letters
Volume79
Issue number2
DOIs
StatePublished - Jul 14 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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