Photoemissive scanning microscopy of doped regions on semiconductor surfaces

B. Quiniou, R. Scarmozzino, Z. Wu, R. M. Osgood

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Photoelectric emission induced by a focused UV laser beam (λ=257 nm) has been used to probe semiconductor surfaces. It was possible to distinguish between regions of different doping levels on a silicon surface. The spatial resolution was found to be limited only by the laser beam spot size.

Original languageEnglish (US)
Pages (from-to)481-483
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number5
DOIs
StatePublished - 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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