Photoemissive scanning microscopy of doped regions on semiconductor surfaces

B. Quiniou; R. Scarmozzino; Z. Wu; R. M. Osgood

doi:10.1063/1.101859

Photoemissive scanning microscopy of doped regions on semiconductor surfaces

B. Quiniou, R. Scarmozzino, Z. Wu, R. M. Osgood

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Photoelectric emission induced by a focused UV laser beam (λ=257 nm) has been used to probe semiconductor surfaces. It was possible to distinguish between regions of different doping levels on a silicon surface. The spatial resolution was found to be limited only by the laser beam spot size.

Original language	English (US)
Pages (from-to)	481-483
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	5
DOIs	https://doi.org/10.1063/1.101859
State	Published - 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.101859

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@article{a182cc842d754d3281051c013b36f322,

title = "Photoemissive scanning microscopy of doped regions on semiconductor surfaces",

abstract = "Photoelectric emission induced by a focused UV laser beam (λ=257 nm) has been used to probe semiconductor surfaces. It was possible to distinguish between regions of different doping levels on a silicon surface. The spatial resolution was found to be limited only by the laser beam spot size.",

author = "B. Quiniou and R. Scarmozzino and Z. Wu and Osgood, {R. M.}",

year = "1989",

doi = "10.1063/1.101859",

language = "English (US)",

volume = "55",

pages = "481--483",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

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T1 - Photoemissive scanning microscopy of doped regions on semiconductor surfaces

AU - Quiniou, B.

AU - Scarmozzino, R.

AU - Wu, Z.

AU - Osgood, R. M.

PY - 1989

Y1 - 1989

N2 - Photoelectric emission induced by a focused UV laser beam (λ=257 nm) has been used to probe semiconductor surfaces. It was possible to distinguish between regions of different doping levels on a silicon surface. The spatial resolution was found to be limited only by the laser beam spot size.

AB - Photoelectric emission induced by a focused UV laser beam (λ=257 nm) has been used to probe semiconductor surfaces. It was possible to distinguish between regions of different doping levels on a silicon surface. The spatial resolution was found to be limited only by the laser beam spot size.

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U2 - 10.1063/1.101859

DO - 10.1063/1.101859

M3 - Article

AN - SCOPUS:36549091927

VL - 55

SP - 481

EP - 483

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

Photoemissive scanning microscopy of doped regions on semiconductor surfaces

Abstract

All Science Journal Classification (ASJC) codes

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