Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs

L. Calderon, Y. Lu, H. Shen, J. Pamulapati, M. Dutta, W. H. Chang, L. W. Yang, P. D. Wright

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Abstract

Room-temperature photoluminescence is used to investigate the basic recombination mechanisms in carbon-doped GaAs samples, with hole concentrations ranging from 3.0×1016 to 1.2×1020 cm -3. The solution of a one-dimensional, steady-state continuity equation for minority carriers indicates that in heavily carbon-doped GaAs, surface recombination is minimal, while bulk nonradiative recombination is dominant. The bulk nonradiative recombination rate depends not only on p 2, which represents Auger recombination, but also on p3. By using a single p+-GaAs:C (1×1020 cm-3) base layer in an AlGaAs/GaAs heterojunction bipolar transistor, the surface recombination is minimized.

Original languageEnglish (US)
Pages (from-to)1597-1599
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number13
DOIs
StatePublished - Dec 1 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Calderon, L., Lu, Y., Shen, H., Pamulapati, J., Dutta, M., Chang, W. H., Yang, L. W., & Wright, P. D. (1992). Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs. Applied Physics Letters, 60(13), 1597-1599. https://doi.org/10.1063/1.107483