Room-temperature photoluminescence is used to investigate the basic recombination mechanisms in carbon-doped GaAs samples, with hole concentrations ranging from 3.0×1016 to 1.2×1020 cm -3. The solution of a one-dimensional, steady-state continuity equation for minority carriers indicates that in heavily carbon-doped GaAs, surface recombination is minimal, while bulk nonradiative recombination is dominant. The bulk nonradiative recombination rate depends not only on p 2, which represents Auger recombination, but also on p3. By using a single p+-GaAs:C (1×1020 cm-3) base layer in an AlGaAs/GaAs heterojunction bipolar transistor, the surface recombination is minimized.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)