Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs

L. Calderon, Y. Lu, H. Shen, J. Pamulapati, M. Dutta, W. H. Chang, L. W. Yang, P. D. Wright

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Room-temperature photoluminescence is used to investigate the basic recombination mechanisms in carbon-doped GaAs samples, with hole concentrations ranging from 3.0×1016 to 1.2×1020 cm -3. The solution of a one-dimensional, steady-state continuity equation for minority carriers indicates that in heavily carbon-doped GaAs, surface recombination is minimal, while bulk nonradiative recombination is dominant. The bulk nonradiative recombination rate depends not only on p 2, which represents Auger recombination, but also on p3. By using a single p+-GaAs:C (1×1020 cm-3) base layer in an AlGaAs/GaAs heterojunction bipolar transistor, the surface recombination is minimized.

Original languageEnglish (US)
Pages (from-to)1597-1599
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number13
DOIs
StatePublished - Dec 1 1992

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photoluminescence
carbon
continuity equation
bipolar transistors
minority carriers
aluminum gallium arsenides
heterojunctions
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Calderon, L., Lu, Y., Shen, H., Pamulapati, J., Dutta, M., Chang, W. H., ... Wright, P. D. (1992). Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs. Applied Physics Letters, 60(13), 1597-1599. https://doi.org/10.1063/1.107483
Calderon, L. ; Lu, Y. ; Shen, H. ; Pamulapati, J. ; Dutta, M. ; Chang, W. H. ; Yang, L. W. ; Wright, P. D. / Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs. In: Applied Physics Letters. 1992 ; Vol. 60, No. 13. pp. 1597-1599.
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Calderon, L, Lu, Y, Shen, H, Pamulapati, J, Dutta, M, Chang, WH, Yang, LW & Wright, PD 1992, 'Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs', Applied Physics Letters, vol. 60, no. 13, pp. 1597-1599. https://doi.org/10.1063/1.107483

Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs. / Calderon, L.; Lu, Y.; Shen, H.; Pamulapati, J.; Dutta, M.; Chang, W. H.; Yang, L. W.; Wright, P. D.

In: Applied Physics Letters, Vol. 60, No. 13, 01.12.1992, p. 1597-1599.

Research output: Contribution to journalArticle

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AU - Calderon, L.

AU - Lu, Y.

AU - Shen, H.

AU - Pamulapati, J.

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AU - Chang, W. H.

AU - Yang, L. W.

AU - Wright, P. D.

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