Photoluminescence from chemically exfoliated MoS 2

Goki Eda; Hisato Yamaguchi; Damien Voiry; Takeshi Fujita; Mingwei Chen; Manish Chhowalla

doi:10.1021/nl201874w

Photoluminescence from chemically exfoliated MoS ₂

Goki Eda, Hisato Yamaguchi, Damien Voiry, Takeshi Fujita, Mingwei Chen, Manish Chhowalla

School of Engineering, Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

3173 Scopus citations

Abstract

A two-dimensional crystal of molybdenum disulfide (MoS ₂) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS ₂ via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS ₂ due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS ₂. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 °C, chemically exfoliated MoS ₂ exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.

Original language	English (US)
Pages (from-to)	5111-5116
Number of pages	6
Journal	Nano Letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1021/nl201874w
State	Published - Dec 14 2011

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

Keywords

MoS , photoluminescence, exfoliation, phase transformation, dispersion

Access to Document

10.1021/nl201874w

Cite this

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title = "Photoluminescence from chemically exfoliated MoS 2 ",

abstract = "A two-dimensional crystal of molybdenum disulfide (MoS 2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS 2 via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS 2 due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS 2. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 °C, chemically exfoliated MoS 2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.",

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AU - Eda, Goki

AU - Yamaguchi, Hisato

AU - Voiry, Damien

AU - Fujita, Takeshi

AU - Chen, Mingwei

AU - Chhowalla, Manish

PY - 2011/12/14

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AB - A two-dimensional crystal of molybdenum disulfide (MoS 2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS 2 via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS 2 due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS 2. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 °C, chemically exfoliated MoS 2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.

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