Photoresponse of ZnO single crystal films

Ying Li, Shiwei Feng, Ji Yang, Yuezong Zhang, Xuesong Xie, Changzhi Lü, Yicheng Lu

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The ohmic contact and photoresponse of a ZnO single crystal film by metalorganic chemical vapor deposition (MOCVD) were investigated. The electrical and photoresponsive changes in the ZnO film due to RF sputter deposition of SiO2 (antireflection coating) were also discussed. The experimental results show that the non-alloyed Al/Au metallization scheme forms good ohmic contact on n-type ZnO, RF sputter deposition of SiO2 induces defects which behave as carrier traps and prolong response time, and the photoresponse of ZnO epitaxial film deteriorates with time.

Original languageEnglish (US)
Pages (from-to)309-312
Number of pages4
JournalFrontiers of Optoelectronics in China
Volume1
Issue number3-4
DOIs
StatePublished - Dec 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • RF sputter damage
  • ZnO single crystal film
  • antireflection coating (AR coating)
  • metalorganic chemical vapor deposition (MOCVD)
  • photoresponse

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