Photovoltaic response in poly(3-octylthiophene) based metal-semiconductor-metal diodes.

E. Kymakis, G. A.J. Amaratunga, I. Alexandrou, M. Chhowalla, W. I. Milne

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide (ITO) coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10-4 was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6% under illumination at 256 nm at an intensity of 2μW/cm2.

Original languageEnglish (US)
Pages (from-to)112-116
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2001
EventOrganic Photovoltaics - San Diego, CA, United States
Duration: Aug 3 2000 → …

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


  • Conducting polymers
  • Photodiodes
  • Photovoltaic
  • Poly(3-octylthiophene)
  • Solar cell


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