Photovoltaic response in poly(3-octylthiophene) based metal-semiconductor-metal diodes.

E. Kymakis; G. A.J. Amaratunga; I. Alexandrou; M. Chhowalla; W. I. Milne

doi:10.1117/12.416939

Photovoltaic response in poly(3-octylthiophene) based metal-semiconductor-metal diodes.

E. Kymakis, G. A.J. Amaratunga, I. Alexandrou, M. Chhowalla, W. I. Milne

School of Engineering, Materials Science & Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide (ITO) coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10^-4 was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6% under illumination at 256 nm at an intensity of 2μW/cm².

Original language	English (US)
Pages (from-to)	112-116
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4108
DOIs	https://doi.org/10.1117/12.416939
State	Published - 2001
Event	Organic Photovoltaics - San Diego, CA, United States Duration: Aug 3 2000 → …

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Conducting polymers
Photodiodes
Photovoltaic
Poly(3-octylthiophene)
Solar cell

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10.1117/12.416939

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title = "Photovoltaic response in poly(3-octylthiophene) based metal-semiconductor-metal diodes.",

abstract = "We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide (ITO) coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10-4 was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6% under illumination at 256 nm at an intensity of 2μW/cm2.",

keywords = "Conducting polymers, Photodiodes, Photovoltaic, Poly(3-octylthiophene), Solar cell",

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AU - Kymakis, E.

AU - Amaratunga, G. A.J.

AU - Alexandrou, I.

AU - Chhowalla, M.

AU - Milne, W. I.

PY - 2001

Y1 - 2001

N2 - We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide (ITO) coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10-4 was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6% under illumination at 256 nm at an intensity of 2μW/cm2.

AB - We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide (ITO) coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10-4 was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6% under illumination at 256 nm at an intensity of 2μW/cm2.

KW - Conducting polymers

KW - Photodiodes

KW - Photovoltaic

KW - Poly(3-octylthiophene)

KW - Solar cell

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

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ER -

Photovoltaic response in poly(3-octylthiophene) based metal-semiconductor-metal diodes.

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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