Physics and technology of electronic insulator-to-metal transition (E-IMT) for record high on/off ratio and low voltage in device applications

Jianqiang Lin, Khan Alam, Leonidas Ocola, Zhen Zhang, Suman Datta, Shriram Ramanathan, Supratik Guha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

New device concepts related to both computing and biological function emulation are emerging rapidly based upon the electronic insulator-to-metal transition (E-IMT) effect that some oxides, such as VO2, exhibit. However, the experimental E-IMT devices to-date are limited to an ON/OFF ratio of ∼102, resulting in a small and inadequate dynamic range in device operation. In addition, the voltage that drives the E-IMT is high, typically above 1 V. In this paper, we investigate the physics and technology toward realizing both high ON/OFF and low-voltage E-IMT devices. We show that, the ON/OFF ratio, critical E-IMT voltage, and device reliability are closely coupled. A predictive model is developed and shows that, for reliable operation, the maximum ON/OFF ratio of an E-IMT device should follow a square-root relation with the strength of the thermally driven insulator-to-metal transition (T-IMT). This new design rule is verified by systematic experiments using prototypical VO2 E-IMT devices. Through this study, we achieve a record value of reliable E-IMT with an ON/OFF ratio of 3.5×103 at 1.2 V - greater than 10x improvement over the previous state-of-the-art. A record low voltage of IMT switching at 0.3 V (ON/OFF ratio = 20) is also demonstrated. The proposed universal design rule is widely applicable for a range of emerging applications based on E-IMT devices. As an experimental example, the E-IMT based transistors show an ultra-steep subthreshold swing (<1mV/dec) and ON/OFF ratio >103.

Original languageEnglish (US)
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23.4.1-23.4.4
ISBN (Electronic)9781538635599
DOIs
StatePublished - Jan 23 2018
Externally publishedYes
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: Dec 2 2017Dec 6 2017

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/TerritoryUnited States
CitySan Francisco
Period12/2/1712/6/17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Physics and technology of electronic insulator-to-metal transition (E-IMT) for record high on/off ratio and low voltage in device applications'. Together they form a unique fingerprint.

Cite this