Preliminary observation of 1-D effects in narrow Si Mosfet structures

W. J. Skocpol, A. M. Voshchenkov, Richard Howard, E. L. Hu, L. D. Jackel, R. W. Epworth, L. A. Fetter, P. Grabbe, D. M. Tennant

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.

Original languageEnglish (US)
Pages (from-to)2105-2107
Number of pages3
JournalPhysica B+C
Volume109-110
Issue numberC
DOIs
StatePublished - Jan 1 1982
Externally publishedYes

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Inversion layers
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Skocpol, W. J., Voshchenkov, A. M., Howard, R., Hu, E. L., Jackel, L. D., Epworth, R. W., ... Tennant, D. M. (1982). Preliminary observation of 1-D effects in narrow Si Mosfet structures. Physica B+C, 109-110(C), 2105-2107. https://doi.org/10.1016/0378-4363(82)90251-0
Skocpol, W. J. ; Voshchenkov, A. M. ; Howard, Richard ; Hu, E. L. ; Jackel, L. D. ; Epworth, R. W. ; Fetter, L. A. ; Grabbe, P. ; Tennant, D. M. / Preliminary observation of 1-D effects in narrow Si Mosfet structures. In: Physica B+C. 1982 ; Vol. 109-110, No. C. pp. 2105-2107.
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Skocpol, WJ, Voshchenkov, AM, Howard, R, Hu, EL, Jackel, LD, Epworth, RW, Fetter, LA, Grabbe, P & Tennant, DM 1982, 'Preliminary observation of 1-D effects in narrow Si Mosfet structures', Physica B+C, vol. 109-110, no. C, pp. 2105-2107. https://doi.org/10.1016/0378-4363(82)90251-0

Preliminary observation of 1-D effects in narrow Si Mosfet structures. / Skocpol, W. J.; Voshchenkov, A. M.; Howard, Richard; Hu, E. L.; Jackel, L. D.; Epworth, R. W.; Fetter, L. A.; Grabbe, P.; Tennant, D. M.

In: Physica B+C, Vol. 109-110, No. C, 01.01.1982, p. 2105-2107.

Research output: Contribution to journalArticle

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T1 - Preliminary observation of 1-D effects in narrow Si Mosfet structures

AU - Skocpol, W. J.

AU - Voshchenkov, A. M.

AU - Howard, Richard

AU - Hu, E. L.

AU - Jackel, L. D.

AU - Epworth, R. W.

AU - Fetter, L. A.

AU - Grabbe, P.

AU - Tennant, D. M.

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Y1 - 1982/1/1

N2 - Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.

AB - Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.

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Skocpol WJ, Voshchenkov AM, Howard R, Hu EL, Jackel LD, Epworth RW et al. Preliminary observation of 1-D effects in narrow Si Mosfet structures. Physica B+C. 1982 Jan 1;109-110(C):2105-2107. https://doi.org/10.1016/0378-4363(82)90251-0