Preliminary observation of 1-D effects in narrow Si Mosfet structures

W. J. Skocpol, A. M. Voshchenkov, Richard Howard, E. L. Hu, L. D. Jackel, R. W. Epworth, L. A. Fetter, P. Grabbe, D. M. Tennant

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3 Scopus citations

Abstract

Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.

Original languageEnglish (US)
Pages (from-to)2105-2107
Number of pages3
JournalPhysica B+C
Volume109-110
Issue numberC
DOIs
StatePublished - Jan 1 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Skocpol, W. J., Voshchenkov, A. M., Howard, R., Hu, E. L., Jackel, L. D., Epworth, R. W., Fetter, L. A., Grabbe, P., & Tennant, D. M. (1982). Preliminary observation of 1-D effects in narrow Si Mosfet structures. Physica B+C, 109-110(C), 2105-2107. https://doi.org/10.1016/0378-4363(82)90251-0