Preliminary observation of 1-D effects in narrow Si Mosfet structures

W. J. Skocpol; A. M. Voshchenkov; R. E. Howard; E. L. Hu; L. D. Jackel; R. W. Epworth; L. A. Fetter; P. Grabbe; D. M. Tennant

doi:10.1016/0378-4363(82)90251-0

Preliminary observation of 1-D effects in narrow Si Mosfet structures

W. J. Skocpol, A. M. Voshchenkov, R. E. Howard, E. L. Hu, L. D. Jackel, R. W. Epworth, L. A. Fetter, P. Grabbe, D. M. Tennant

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.

Original language	English (US)
Pages (from-to)	2105-2107
Number of pages	3
Journal	Physica B+C
Volume	109-110
Issue number	C
DOIs	https://doi.org/10.1016/0378-4363(82)90251-0
State	Published - Jul 1982
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1016/0378-4363(82)90251-0

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@article{c0e9c7293fc04bb6801ede504e31e966,

title = "Preliminary observation of 1-D effects in narrow Si Mosfet structures",

abstract = "Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.",

author = "Skocpol, {W. J.} and Voshchenkov, {A. M.} and Howard, {R. E.} and Hu, {E. L.} and Jackel, {L. D.} and Epworth, {R. W.} and Fetter, {L. A.} and P. Grabbe and Tennant, {D. M.}",

year = "1982",

month = jul,

doi = "10.1016/0378-4363(82)90251-0",

language = "English (US)",

volume = "109-110",

pages = "2105--2107",

journal = "Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics",

issn = "0378-4363",

publisher = "North-Holland Publ Co",

number = "C",

}

TY - JOUR

T1 - Preliminary observation of 1-D effects in narrow Si Mosfet structures

AU - Skocpol, W. J.

AU - Voshchenkov, A. M.

AU - Howard, R. E.

AU - Hu, E. L.

AU - Jackel, L. D.

AU - Epworth, R. W.

AU - Fetter, L. A.

AU - Grabbe, P.

AU - Tennant, D. M.

PY - 1982/7

Y1 - 1982/7

N2 - Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.

AB - Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.

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UR - http://www.scopus.com/inward/citedby.url?scp=0020153383&partnerID=8YFLogxK

U2 - 10.1016/0378-4363(82)90251-0

DO - 10.1016/0378-4363(82)90251-0

M3 - Article

AN - SCOPUS:0020153383

SN - 0378-4363

VL - 109-110

SP - 2105

EP - 2107

JO - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics

JF - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics

IS - C

ER -

Preliminary observation of 1-D effects in narrow Si Mosfet structures

Abstract

All Science Journal Classification (ASJC) codes

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