Preliminary observation of 1-D effects in narrow Si Mosfet structures

W. J. Skocpol, A. M. Voshchenkov, R. E. Howard, E. L. Hu, L. D. Jackel, R. W. Epworth, L. A. Fetter, P. Grabbe, D. M. Tennant

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.

Original languageEnglish (US)
Pages (from-to)2105-2107
Number of pages3
JournalPhysica B+C
Issue numberC
StatePublished - Jul 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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