Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration.
|Original language||English (US)|
|Number of pages||3|
|State||Published - Jul 1982|
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