Processing and dielectric properties of sol-gel derived BST thin films

Danielle M. Tahan, Ahmad Safari, Lisa Klein

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The processing and dielectric properties of BaxSri1-xTiO3 (x=0.0-1.0) thin films prepared by a sol-gel method were investigated. The films were prepared using solutions consisting of acetate powders and titanium IV isopropoxide in a mixture of acetic acid and ethylene glycol. Processing parameters were optimized to develop stable solutions which yielded relatively low crystallization temperatures. Electron microscopy techniques were used to examine the grain size and microstructure of the thin films. The grain size was on the order of 50 nm and had a marked effect on the electrical properties of the films. Properties such as dielectric constant, dissipation factor and leakage current were also measured as a function of film thickness. A dielectric constant ranging from 200 to 625 was obtained for BST films with x = 0.6 over a thickness range of 100 to 900 nm. Leakage current densities of the films remained below 0.1 μA/cm2 for extended time periods, when measured at an applied field of 75 kV/cm.

Original languageEnglish (US)
Pages (from-to)99-106
Number of pages8
JournalIntegrated Ferroelectrics
Volume15
Issue number1-4
DOIs
StatePublished - Jan 1 1997

Fingerprint

Dielectric properties
Sol-gels
dielectric properties
gels
Thin films
thin films
Processing
Leakage currents
leakage
Permittivity
grain size
permittivity
Ethylene Glycol
Crystallization
Ethylene glycol
acetic acid
Acetic acid
Acetic Acid
Powders
Sol-gel process

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{ca540fdeb22a49938280c67c3c41bf42,
title = "Processing and dielectric properties of sol-gel derived BST thin films",
abstract = "The processing and dielectric properties of BaxSri1-xTiO3 (x=0.0-1.0) thin films prepared by a sol-gel method were investigated. The films were prepared using solutions consisting of acetate powders and titanium IV isopropoxide in a mixture of acetic acid and ethylene glycol. Processing parameters were optimized to develop stable solutions which yielded relatively low crystallization temperatures. Electron microscopy techniques were used to examine the grain size and microstructure of the thin films. The grain size was on the order of 50 nm and had a marked effect on the electrical properties of the films. Properties such as dielectric constant, dissipation factor and leakage current were also measured as a function of film thickness. A dielectric constant ranging from 200 to 625 was obtained for BST films with x = 0.6 over a thickness range of 100 to 900 nm. Leakage current densities of the films remained below 0.1 μA/cm2 for extended time periods, when measured at an applied field of 75 kV/cm.",
author = "Tahan, {Danielle M.} and Ahmad Safari and Lisa Klein",
year = "1997",
month = "1",
day = "1",
doi = "10.1080/10584589708015700",
language = "English (US)",
volume = "15",
pages = "99--106",
journal = "Integrated Ferroelectrics",
issn = "1058-4587",
publisher = "Taylor and Francis Ltd.",
number = "1-4",

}

Processing and dielectric properties of sol-gel derived BST thin films. / Tahan, Danielle M.; Safari, Ahmad; Klein, Lisa.

In: Integrated Ferroelectrics, Vol. 15, No. 1-4, 01.01.1997, p. 99-106.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Processing and dielectric properties of sol-gel derived BST thin films

AU - Tahan, Danielle M.

AU - Safari, Ahmad

AU - Klein, Lisa

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The processing and dielectric properties of BaxSri1-xTiO3 (x=0.0-1.0) thin films prepared by a sol-gel method were investigated. The films were prepared using solutions consisting of acetate powders and titanium IV isopropoxide in a mixture of acetic acid and ethylene glycol. Processing parameters were optimized to develop stable solutions which yielded relatively low crystallization temperatures. Electron microscopy techniques were used to examine the grain size and microstructure of the thin films. The grain size was on the order of 50 nm and had a marked effect on the electrical properties of the films. Properties such as dielectric constant, dissipation factor and leakage current were also measured as a function of film thickness. A dielectric constant ranging from 200 to 625 was obtained for BST films with x = 0.6 over a thickness range of 100 to 900 nm. Leakage current densities of the films remained below 0.1 μA/cm2 for extended time periods, when measured at an applied field of 75 kV/cm.

AB - The processing and dielectric properties of BaxSri1-xTiO3 (x=0.0-1.0) thin films prepared by a sol-gel method were investigated. The films were prepared using solutions consisting of acetate powders and titanium IV isopropoxide in a mixture of acetic acid and ethylene glycol. Processing parameters were optimized to develop stable solutions which yielded relatively low crystallization temperatures. Electron microscopy techniques were used to examine the grain size and microstructure of the thin films. The grain size was on the order of 50 nm and had a marked effect on the electrical properties of the films. Properties such as dielectric constant, dissipation factor and leakage current were also measured as a function of film thickness. A dielectric constant ranging from 200 to 625 was obtained for BST films with x = 0.6 over a thickness range of 100 to 900 nm. Leakage current densities of the films remained below 0.1 μA/cm2 for extended time periods, when measured at an applied field of 75 kV/cm.

UR - http://www.scopus.com/inward/record.url?scp=0031375552&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031375552&partnerID=8YFLogxK

U2 - 10.1080/10584589708015700

DO - 10.1080/10584589708015700

M3 - Article

AN - SCOPUS:0031375552

VL - 15

SP - 99

EP - 106

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

SN - 1058-4587

IS - 1-4

ER -