Abstract
Thin films of PMN and PMN-PT were prepared by pulsed laser deposition (PLD) on MgO(100) and Pt coated Si substrates. Processing parameters such as substrate temperature, oxygen pressure, and substrate material have a significant effect on perovskite phase formation. Pure perovskite PMN and PMN-PT were obtained at substrate temperatures in the range of 535° to 565 °C and an oxygen pressure of 200 mTorr. Perovskite PMN phase prefers to nucleate on the MgO(100) which has a smoother surface than that of the Pt coated Si substrate. An LSCO layer on Pt coated Si substrates promoted perovskite phase formation. The electrical properties of PMN and PMN-PT thin films were evaluated. A maximum dielectric constant of 4500 and dielectric loss of 0.05 at 1 kHz were obtained. The charge storage density of the films was about 100 fC/μm2 at 50 kV/cm.
| Original language | English (US) |
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| Pages | 479-482 |
| Number of pages | 4 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996 |
Other
| Other | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) |
|---|---|
| City | East Brunswick, NJ, USA |
| Period | 8/18/96 → 8/21/96 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering