Properties of donor doped BaTi(Mn)O3+SiO2 sintered in reducing atmospheres

David I. Spang; Ahmad Safari; Ian Burn

Properties of donor doped BaTi(Mn)O₃+SiO₂ sintered in reducing atmospheres

David I. Spang, Ahmad Safari, Ian Burn

School of Engineering, Materials Science & Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The effect of trivalent (Ho, Nd, Y) and pentavalent (Nb, V) donor dopants on the dielectric properties of BaTiO₃ were investigated. The effects of two different levels of MnO on the reduction resistance and dielectric properties were discussed. The temperature coefficient of capacitance behaviors for the formulations are presented.

Original language	English (US)
Pages	525-528
Number of pages	4
State	Published - 1998
Event	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: Aug 24 1998 → Aug 27 1998

Other

Other	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
City	Montreaux, Switz
Period	8/24/98 → 8/27/98

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Properties of donor doped BaTi(Mn)O3+SiO2 sintered in reducing atmospheres",

abstract = "The effect of trivalent (Ho, Nd, Y) and pentavalent (Nb, V) donor dopants on the dielectric properties of BaTiO3 were investigated. The effects of two different levels of MnO on the reduction resistance and dielectric properties were discussed. The temperature coefficient of capacitance behaviors for the formulations are presented.",

author = "Spang, {David I.} and Ahmad Safari and Ian Burn",

year = "1998",

language = "English (US)",

pages = "525--528",

note = "Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) ; Conference date: 24-08-1998 Through 27-08-1998",

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TY - CONF

T1 - Properties of donor doped BaTi(Mn)O3+SiO2 sintered in reducing atmospheres

AU - Spang, David I.

AU - Safari, Ahmad

AU - Burn, Ian

PY - 1998

Y1 - 1998

N2 - The effect of trivalent (Ho, Nd, Y) and pentavalent (Nb, V) donor dopants on the dielectric properties of BaTiO3 were investigated. The effects of two different levels of MnO on the reduction resistance and dielectric properties were discussed. The temperature coefficient of capacitance behaviors for the formulations are presented.

AB - The effect of trivalent (Ho, Nd, Y) and pentavalent (Nb, V) donor dopants on the dielectric properties of BaTiO3 were investigated. The effects of two different levels of MnO on the reduction resistance and dielectric properties were discussed. The temperature coefficient of capacitance behaviors for the formulations are presented.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032282787&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032282787

SP - 525

EP - 528

T2 - Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)

Y2 - 24 August 1998 through 27 August 1998

ER -

Properties of donor doped BaTi(Mn)O₃+SiO₂ sintered in reducing atmospheres

Abstract

Other

All Science Journal Classification (ASJC) codes

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