Properties of epitaxial ZnO thin films for GaN and related applications

H. Shen, M. Wraback, J. Pamulapati, S. Liang, C. Gorla, Y. Lu

Research output: Contribution to journalConference articlepeer-review


In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (112̄0) ZnO//(011̄2) Al2O3 and [0001] ZnO//[01̄11] Al2O3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

Original languageEnglish (US)
Pages (from-to)G3.60
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA
Duration: Nov 30 1998Dec 4 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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