Properties of epitaxial ZnO thin films for GaN and related applications

H. Shen; M. Wraback; J. Pamulapati; S. Liang; C. Gorla; Y. Lu

Properties of epitaxial ZnO thin films for GaN and related applications

H. Shen, M. Wraback, J. Pamulapati, S. Liang, C. Gorla, Y. Lu

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (112̄0) ZnO//(011̄2) Al₂O₃ and [0001] ZnO//[01̄11] Al₂O₃ as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

Original language	English (US)
Pages (from-to)	G3.60
Journal	Materials Research Society Symposium - Proceedings
Volume	537
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 30 1998 → Dec 4 1998

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Properties of epitaxial ZnO thin films for GaN and related applications",

abstract = "In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (11{\=2}0) ZnO//(01{\=1}2) Al2O3 and [0001] ZnO//[0{\=1}11] Al2O3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.",

author = "H. Shen and M. Wraback and J. Pamulapati and S. Liang and C. Gorla and Y. Lu",

year = "1999",

language = "English (US)",

volume = "537",

pages = "G3.60",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' ; Conference date: 30-11-1998 Through 04-12-1998",

}

TY - JOUR

T1 - Properties of epitaxial ZnO thin films for GaN and related applications

AU - Shen, H.

AU - Wraback, M.

AU - Pamulapati, J.

AU - Liang, S.

AU - Gorla, C.

AU - Lu, Y.

PY - 1999

Y1 - 1999

N2 - In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (112̄0) ZnO//(011̄2) Al2O3 and [0001] ZnO//[01̄11] Al2O3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

AB - In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (112̄0) ZnO//(011̄2) Al2O3 and [0001] ZnO//[01̄11] Al2O3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

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M3 - Conference article

AN - SCOPUS:17644442098

SN - 0272-9172

VL - 537

SP - G3.60

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys'

Y2 - 30 November 1998 through 4 December 1998

ER -

Properties of epitaxial ZnO thin films for GaN and related applications

Abstract

All Science Journal Classification (ASJC) codes

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