Properties of epitaxial ZnO thin films for GaN and related applications

H. Shen, M. Wraback, J. Pamulapati, S. Liang, C. Gorla, Y. Lu

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Abstract

In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (1 1 2̄ 0) ZnO//(0 1 1̄ 2) Al 2O 3 and [0 0 0 1] ZnO//[0 1̄ 1 1] Al 2O 3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

Original languageEnglish (US)
Pages (from-to)5d
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4
Issue numberSUPPL. 1
StatePublished - Dec 1 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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