Proton irradiation of 4H-SiC ultraviolet single photon avalanche diodes

D. Kurt Gaskill, Jun Hu, X. Xin, Jian H. Zhao, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of proton irradiation on uv 4H-SiC single photon avalanche photodiodes (SPADs) are reported. The SPADs, grown by chemical vapor deposition, were designed for uv operation with dark count rates (DCR) of about 30 kHz and single photon detection efficiency (SPDE) of 4.89%. The SPADs were irradiated with 2 MeV protons to a fluence of 1012 cm-2. After irradiation, the I-V characteristics show forward voltage (<1.9 V) generation-recombination currents 2 to 3 times higher than before irradiation. Single photon counting measurements imply generation-recombination centers created in the band gap after irradiation. For threshold voltage ranging from 23 to 26 mV, the 4H-SiC SPAD showed low DCR (<54 kHz) and high SPDE (>1%) after irradiation. The SPADs demonstrated proton radiation tolerance for geosynchronous space applications.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2010
EditorsEdouard V. Monakhov, Tamas Hornos, Bengt G. Svensson
PublisherTrans Tech Publications Ltd
Pages551-554
Number of pages4
ISBN (Print)9783037850794
DOIs
StatePublished - 2011

Publication series

NameMaterials Science Forum
Volume679-680
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Proton irradiation
  • Single photon avalanche diode
  • Single photon detection efficiency

Fingerprint

Dive into the research topics of 'Proton irradiation of 4H-SiC ultraviolet single photon avalanche diodes'. Together they form a unique fingerprint.

Cite this