Proton tolerance of SiGe precision voltage references for extreme temperature range electronics

Laleh Najafizadeh, Marco Bellini, A. P.Gnana Prakash, Gustavo A. Espinel, John D. Cressler, Paul W. Marshall, Cheryl J. Marshall

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

A comprehensive investigation of the effects of proton irradiation on the performance of SiGe BiCMOS precision voltage references intended for extreme environment operational conditions is presented. The voltage reference circuits were designed in two distinct SiGe BiCMOS technology platforms (first generation (50 GHz) and third generation (200 GHz)) in order to investigate the effect of technology scaling. The circuits were irradiated at both room temperature and at 77 K. Measurement results from the experiments indicate that the proton-induced changes in the SiGe bandgap references are minor, even down to cryogenic temperatures, clearly good news for the potential application of SiGe mixed-signal circuits in emerging extreme environments.

Original languageEnglish (US)
Pages (from-to)3210-3216
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume53
Issue number6
DOIs
StatePublished - Dec 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Keywords

  • BiCMOS analog integrated circuits
  • Heterojuction bipolar transistors
  • Proton radiation effects

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