Pulsed laser deposition and characterization of Hf-based high-k dielectric thin films

Mehmet Alper Sahiner, Joseph C. Woicik, Peng Gao, Patrick McKeown, Mark C. Croft, Michael Gartman, Brendan Benapfla

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


The continuous downward scaling of the complementary metal oxide semiconductor (CMOS) devices has enabled the Si-based semiconductor industry to meet the technological requirements such as high performance and low power consumption. However, the ever-shrinking dimensions of the active device, metal-oxide-semiconductor-field-effect-transistor (MOSFET), in the circuit create other physical challenges. The industry standard SiO2 for the gate region is reaching to its physical limits. New materials with higher dielectric constant are needed to replace the silicon dioxide in these gate regions. One of the candidates for this replacement is Hf-based oxides. In this project, we have used pulsed laser deposition (PLD) to synthesize Hf-based high-k dielectric films on Si single crystal substrates with varying deposition parameters and mixtures of HfO2 and ZrO2 then used X-ray absorption fine-structure spectroscopy (XAFS) in order to probe the local structure around the Hf metal. The local structural information extracted through XAFS has been correlated with the deposition parameters such as the substrate temperature and the HfO2, to ZrO2 ratio in the mixtures.

Original languageEnglish (US)
Pages (from-to)6548-6551
Number of pages4
JournalThin Solid Films
Issue number16 SPEC. ISS.
StatePublished - Jun 4 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


  • Hafnium dioxide
  • High-k dielectric
  • Pulsed laser deposition
  • XAFS


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