Quantized Landau level spectrum and its density dependence in graphene

Adina Luican, Guohong Li, Eva Y. Andrei

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

Scanning tunneling microscopy and spectroscopy in a magnetic field was used to study Landau quantization in graphene and its dependence on charge carrier density. Measurements were carried out on exfoliated graphene samples deposited on a chlorinated SiO2 thermal oxide, which allowed for the observation of the Landau level sequences characteristic of single-layer graphene while tuning the density through the Si backgate. Upon changing the carrier density, we find abrupt jumps in the Fermi level after each Landau level is filled. Moreover, at low doping levels, a marked increase in the Fermi velocity is observed, which is consistent with the logarithmic divergence expected due to the onset of many-body effects close to the Dirac point.

Original languageEnglish (US)
Article number041405
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number4
DOIs
StatePublished - Jan 27 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Quantized Landau level spectrum and its density dependence in graphene'. Together they form a unique fingerprint.

Cite this