Quantum transport in quasi-one-dimensional GaAsAl x Ga 1-x As heterostructure devices

A. M. Chang, G. Timp, Richard Howard, R. E. Behringer, P. M. Mankeiwich, J. E. Cunningham, T. Y. Chang, B. Chelluri

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We study quantum transport properties of narrow GaAsAl x Ga 1-x As wires and rings made by electron beam lithography. At low temperatures, clear signatures of Ah́aronov-Bohm quantum interference effects are observed due to the application of a perpendicular magnetic field. The ring devices show large amplitude ( - 5%) resistance oscillations periodic in magnetic flux penetrating the ring, which diminish in amplitude above - 3kG. The wire devices show aperiodic resistance fluctuations as large as 100%, which persist into the quantum Hall regime. The large amplitudes observed result from the small number of transverse channels occupied below the Fermi level.

Original languageEnglish (US)
Pages (from-to)515-520
Number of pages6
JournalSuperlattices and Microstructures
Volume4
Issue number4-5
DOIs
StatePublished - Jan 1 1988
Externally publishedYes

Fingerprint

Heterojunctions
Wire
Electron beam lithography
rings
Magnetic flux
Fermi level
wire
Transport properties
Magnetic fields
magnetic flux
lithography
transport properties
signatures
electron beams
interference
oscillations
magnetic fields
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chang, A. M., Timp, G., Howard, R., Behringer, R. E., Mankeiwich, P. M., Cunningham, J. E., ... Chelluri, B. (1988). Quantum transport in quasi-one-dimensional GaAsAl x Ga 1-x As heterostructure devices Superlattices and Microstructures, 4(4-5), 515-520. https://doi.org/10.1016/0749-6036(88)90229-7
Chang, A. M. ; Timp, G. ; Howard, Richard ; Behringer, R. E. ; Mankeiwich, P. M. ; Cunningham, J. E. ; Chang, T. Y. ; Chelluri, B. / Quantum transport in quasi-one-dimensional GaAsAl x Ga 1-x As heterostructure devices In: Superlattices and Microstructures. 1988 ; Vol. 4, No. 4-5. pp. 515-520.
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abstract = "We study quantum transport properties of narrow GaAsAl x Ga 1-x As wires and rings made by electron beam lithography. At low temperatures, clear signatures of Ah́aronov-Bohm quantum interference effects are observed due to the application of a perpendicular magnetic field. The ring devices show large amplitude ( - 5{\%}) resistance oscillations periodic in magnetic flux penetrating the ring, which diminish in amplitude above - 3kG. The wire devices show aperiodic resistance fluctuations as large as 100{\%}, which persist into the quantum Hall regime. The large amplitudes observed result from the small number of transverse channels occupied below the Fermi level.",
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Chang, AM, Timp, G, Howard, R, Behringer, RE, Mankeiwich, PM, Cunningham, JE, Chang, TY & Chelluri, B 1988, ' Quantum transport in quasi-one-dimensional GaAsAl x Ga 1-x As heterostructure devices ', Superlattices and Microstructures, vol. 4, no. 4-5, pp. 515-520. https://doi.org/10.1016/0749-6036(88)90229-7

Quantum transport in quasi-one-dimensional GaAsAl x Ga 1-x As heterostructure devices . / Chang, A. M.; Timp, G.; Howard, Richard; Behringer, R. E.; Mankeiwich, P. M.; Cunningham, J. E.; Chang, T. Y.; Chelluri, B.

In: Superlattices and Microstructures, Vol. 4, No. 4-5, 01.01.1988, p. 515-520.

Research output: Contribution to journalArticle

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T1 - Quantum transport in quasi-one-dimensional GaAsAl x Ga 1-x As heterostructure devices

AU - Chang, A. M.

AU - Timp, G.

AU - Howard, Richard

AU - Behringer, R. E.

AU - Mankeiwich, P. M.

AU - Cunningham, J. E.

AU - Chang, T. Y.

AU - Chelluri, B.

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AB - We study quantum transport properties of narrow GaAsAl x Ga 1-x As wires and rings made by electron beam lithography. At low temperatures, clear signatures of Ah́aronov-Bohm quantum interference effects are observed due to the application of a perpendicular magnetic field. The ring devices show large amplitude ( - 5%) resistance oscillations periodic in magnetic flux penetrating the ring, which diminish in amplitude above - 3kG. The wire devices show aperiodic resistance fluctuations as large as 100%, which persist into the quantum Hall regime. The large amplitudes observed result from the small number of transverse channels occupied below the Fermi level.

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