Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications

Laleh Najafizadeh; Akil K. Sutton; Bongim Jun; John D. Cressler; Tuan Vo; Omeed Momeni; Mohammad Mojarradi; Chandradevi Ulaganathan; Suheng Chen; Benjamin J. Blalock; Yuan Yao; Xuefeng Yu; Foster Dai; Paul W. Marshall; Cheryl J. Marshall

doi:10.1109/RADECS.2007.5205572

Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications

Laleh Najafizadeh, Akil K. Sutton, Bongim Jun, John D. Cressler, Tuan Vo, Omeed Momeni, Mohammad Mojarradi, Chandradevi Ulaganathan, Suheng Chen, Benjamin J. Blalock, Yuan Yao, Xuefeng Yu, Foster Dai, Paul W. Marshall, Cheryl J. Marshall

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated. The circuits were designed and implemented in a first-generation SiGe BiCMOS technology and were irradiated with 63 MeV protons. The degradation due to proton fluence in each device and circuit was found to be minor, suggesting that SiGe HBT BiCMOS technology could be a robust platform for building electronic com ponents intended for operation under extreme environments.

Original language	English (US)
Title of host publication	2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007
DOIs	https://doi.org/10.1109/RADECS.2007.5205572
State	Published - 2007
Externally published	Yes
Event	2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007 - Deauville, France Duration: Sep 10 2007 → Sep 14 2007

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other	2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007
Country/Territory	France
City	Deauville
Period	9/10/07 → 9/14/07

All Science Journal Classification (ASJC) codes

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2007.5205572

Cite this

Najafizadeh, L., Sutton, A. K., Jun, B., Cressler, J. D., Vo, T., Momeni, O., Mojarradi, M., Ulaganathan, C., Chen, S., Blalock, B. J., Yao, Y., Yu, X., Dai, F., Marshall, P. W., & Marshall, C. J. (2007). Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications. In 2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007 [5205572] (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2007.5205572

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title = "Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications",

abstract = "The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated. The circuits were designed and implemented in a first-generation SiGe BiCMOS technology and were irradiated with 63 MeV protons. The degradation due to proton fluence in each device and circuit was found to be minor, suggesting that SiGe HBT BiCMOS technology could be a robust platform for building electronic com ponents intended for operation under extreme environments.",

author = "Laleh Najafizadeh and Sutton, {Akil K.} and Bongim Jun and Cressler, {John D.} and Tuan Vo and Omeed Momeni and Mohammad Mojarradi and Chandradevi Ulaganathan and Suheng Chen and Blalock, {Benjamin J.} and Yuan Yao and Xuefeng Yu and Foster Dai and Marshall, {Paul W.} and Marshall, {Cheryl J.}",

year = "2007",

doi = "10.1109/RADECS.2007.5205572",

language = "English (US)",

isbn = "9781424417049",

series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",

booktitle = "2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007",

note = "2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007 ; Conference date: 10-09-2007 Through 14-09-2007",

}

Najafizadeh, L, Sutton, AK, Jun, B, Cressler, JD, Vo, T, Momeni, O, Mojarradi, M, Ulaganathan, C, Chen, S, Blalock, BJ, Yao, Y, Yu, X, Dai, F, Marshall, PW & Marshall, CJ 2007, Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications. in 2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007., 5205572, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, 2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007, Deauville, France, 9/10/07. https://doi.org/10.1109/RADECS.2007.5205572

Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications. / Najafizadeh, Laleh; Sutton, Akil K.; Jun, Bongim et al.

2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007. 2007. 5205572 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications

AU - Najafizadeh, Laleh

AU - Sutton, Akil K.

AU - Jun, Bongim

AU - Cressler, John D.

AU - Vo, Tuan

AU - Momeni, Omeed

AU - Mojarradi, Mohammad

AU - Ulaganathan, Chandradevi

AU - Chen, Suheng

AU - Blalock, Benjamin J.

AU - Yao, Yuan

AU - Yu, Xuefeng

AU - Dai, Foster

AU - Marshall, Paul W.

AU - Marshall, Cheryl J.

PY - 2007

Y1 - 2007

N2 - The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated. The circuits were designed and implemented in a first-generation SiGe BiCMOS technology and were irradiated with 63 MeV protons. The degradation due to proton fluence in each device and circuit was found to be minor, suggesting that SiGe HBT BiCMOS technology could be a robust platform for building electronic com ponents intended for operation under extreme environments.

AB - The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated. The circuits were designed and implemented in a first-generation SiGe BiCMOS technology and were irradiated with 63 MeV protons. The degradation due to proton fluence in each device and circuit was found to be minor, suggesting that SiGe HBT BiCMOS technology could be a robust platform for building electronic com ponents intended for operation under extreme environments.

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SN - 9781424417049

T3 - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

BT - 2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007

T2 - 2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007

Y2 - 10 September 2007 through 14 September 2007

ER -

Najafizadeh L, Sutton AK, Jun B, Cressler JD, Vo T, Momeni O et al. Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications. In 2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007. 2007. 5205572. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2007.5205572

Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications

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